RoHS
COMPLIANT
YJB150G06AK
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
60V
● ID (Silicon limited)
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=4.5V)
● 100% EAS Tested
● 100% ▽VDS Tested
150A
<3.5 mohm
<5.0 mohm
● ESD Protected up to 2.0KV(HBM)
General Description
● Split Gate Trench MOSFET technology
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Synchronous Rectification
● Battery Protection Circuit
● Motor drivers and Uninterruptible Power
Supplies
Absolute Maximum Ratings (T =25℃unless otherwise noted)
■
A
Parameter
Symbol
Limit
60
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
18
V
TA=25℃
TA=100℃
TC=25℃
TC=100℃
11
Drain Current (Silicon limited)
ID
A
150
95
Pulsed Drain Current A
Avalanche energy B
IDM
450
441
2
A
EAS
mJ
TA=25℃
TA=100℃
Tc=25℃
Tc=100℃
0.8
Total Power Dissipation C
PD
W
147
59
Junction and Storage Temperature Range
TJ ,TSTG
-55~+150
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
12
Max
15
Units
Thermal Resistance Junction-to-Ambient D
t≤10S
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
48
60
℃/W
RθJC
0.7
0.85
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
PREFERED P/N
Marking
DELIVERY MODE
CODE
YJB150G06AK
F2
YJB150G06AK
800
/
8000
13“ reel
1 / 7
S-E149
Rev.1.1,2-Jun-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com