RoHS
COMPLIANT
YJB60G15H
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
150V
60A
● ID
● RDS(ON)( at VGS=10V)
● RDS(ON)( at VGS=6V)
● 100% EAS Tested
● 100% ▽VDS Tested
<17mΩ
<20mΩ
General Description
● Split gate trench MOSFET technology
● Low RDS(on) & FOM
● Excellent stability and uniformity
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
Applications
● Power management
● Portable equipment
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
150
±20
8.7
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
V
TA=25℃
6.2
TA=100℃
TC=25℃
Drain Current
ID
A
60
42
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
180
200
3.7
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1.8
Total Power Dissipation C
PD
W
136
68
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
33
Max
40
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
0.9
1.1
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJB60G15H
F2
YJB60G15H
800
/
8000
13“ reel
1 / 8
S-E464
Rev.1.0,9-Nov-23
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com