RoHS
COMPLIANT
YJB3D0G04HQ
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
40V
● ID
126A
● RDS(ON)( at VGS=10V)
● 100% EAS Tested
● 100% ▽VDS Tested
<3.0mohm
General Description
● Excellent package for heat dissipation
● High density cell design for low RDS(ON)
● Moisture Sensitivity Level 1
● Epoxy Meets UL 94 V-0 Flammability Rating
● Halogen Free
● Part no. with suffix “Q” means AEC-Q101 qualified
Applications
● Power switching application
● Uninterruptible power supply
● DC-DC convertor
● 12V Automotive systems
Absolute Maximum Ratings (T =25℃ unless otherwise noted)
■
A
Parameter
Symbol
Limit
40
Unit
V
Drain-source Voltage
Gate-source Voltage
VDS
VGS
±20
26
V
TA=25℃
18
TA=100℃
TC=25℃
Drain Current
ID
A
126
89
TC =100℃
Pulsed Drain Current A
Avalanche energy B
IDM
400
156
3.7
A
EAS
mJ
TA=25℃
TA=100℃
TC=25℃
TC =100℃
1.8
Total Power Dissipation C
PD
W
83
41
Junction and Storage Temperature Range
TJ ,TSTG
-55~+175
℃
■Thermal resistance
Parameter
Symbol
RθJA
Typ
33
Max
40
Units
Thermal Resistance Junction-to-Ambient D
Thermal Resistance Junction-to-Case
Steady-State
Steady-State
℃/W
RθJC
1.5
1.8
Ordering Information (Example)
■
PACKING
MINIMUM
PACKAGE(pcs)
INNER BOX
QUANTITY(pcs)
OUTER CARTON
QUANTITY(pcs)
DELIVERY
MODE
PREFERED P/N
Marking
CODE
YJB3D0G04HQ
F2
YJB3D0G04H
800
/
8000
13“ reel
1 / 7
S-B3278
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,25-Dec-23