Datasheet > YJB30GP10A

YJB30GP10A

更新时间： 2024-03-03 10:11:05

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
7页	939K
描述
TO-263

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YJB30GP10A 数据手册

RoHS

COMPLIANT

YJB30GP10A

P-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

-100V

● I_D

-30A

● R_DS(ON)( at V_GS=-10V)

● R_DS(ON)( at V_GS=-4.5V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜56 mohm

＜62 mohm

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● DC-DC Converters

● Power management functions

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

-100

±20

-30

Tc=25℃

Drain Current

I_D

Tc=100℃

-19.2

-120

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

EAS

162

Tc=25℃

125

Total Power Dissipation ^C

P_D

Tc=100℃

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

t≤10S

Steady-State

℃/W

R_θJC

0.8

1.0

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJB30GP10A

800

8000

13“ reel

1 / 7

S-E132

Rev.3.5,26-May-23

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

12 3 4 5 6 7

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