RoHS
YJD106502PQG3
COMPLIANT
Silicon Carbide Schottky Diode
Features
● Positive temperature coefficient
VRRM
650V
IF
3.6A
(
)
● Temperature-independent switching
● Maximum working temperature at 175 °C
● Unipolar devices and zero reverse recovery current
● Zero forward recovery voltage
135°C
QC
5.2nC
● Essentially no switching losses
● Reduction of heat sink requirements
● High-frequency operation
● Reduction of EMI
Typical Applications
Typical applications are in power factor correction(PFC), solar
inverter, uninterruptible power supply, motor drives, photovoltaic
inverter, electric car and charger.
Mechanical Data
●
ackage: TO-220AC
P
Molding compound meets UL 94 V-0 flammability
rating, RoHS-compliant, halogen-free
● Terminals: Tin plated leads
● Polarity: As marked
T =25℃Unless otherwise specified
)
■
(
Maximum Ratings
C
PARAMTETER
SYMBOL
UNIT
VALUE
Device marking code
D106502PQG3
Reverse voltage (repetitive peak)
@ Tj=25°C
VRRM
VRSM
VDC
V
V
V
650
Reverse voltage (Surge Peak)
@ Tj=25°C
650
Reverse voltage (DC)
@ Tj=25°C
650
Continuous forward current @ Tc=25°C
Continuous forward current @ Tc=135°C
Continuous forward current @ Tc=160°C
7.6
IF
A
3.6
2
Non-repetitive peak forward surge current
@ Tc=25°C, tp=10ms, Half Sine Wave
IFSM
A
20
Power Dissipation@ Tc=25°C
45
PTOT
W
Power Dissipation@ Tc=110°C
19
2
i2t Value@ Tc=25°C ,tp=10ms
∫i2dt
A2 S
°C
Operating junction and Storage temperature range
Tj ,Tstg
-55 to +175
1 / 5
S-SIC096
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
Rev.1.0,25-Jun-23