Datasheet > YJB130G10A

YJB130G10A

更新时间： 2024-04-09 19:02:13

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	345K
描述
TO-263

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数据手册

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YJB130G10A 数据手册

RoHS

COMPLIANT

YJB130G10A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

100V

130A

● I_D

● R_DS(ON)( at V_GS=10V)

● R_DS(ON)( at V_GS=4.5V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜5mΩ

＜6mΩ

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Power switching application

● Uninterruptible power supply

● DC-DC convertor

Absolute Maximum Ratings (T =25℃ unless otherwise noted)

■

Parameter

Symbol

Limit

100

±20

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

T_A=25℃

T_A=100℃

T_C=25℃

Drain Current

I_D

130

T_C=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

520

360

2.7

EAS

T_A=25℃

T_A=100℃

T_C=25℃

T_C=100℃

1.1

Total Power Dissipation ^C

P_D

190

Junction and Storage Temperature Range

T_J,T_STG

-55～+150

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Typ

Max

Units

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

℃/W

R_θJC

0.5

0.65

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

DELIVERY

MODE

PREFERED P/N

Marking

CODE

YJB130G10A

800

8000

13“ reel

1 / 8

S-E191

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.1,02-Mar-22

12 3 4 5 6 7 8

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