Datasheet > YJB120G08A

YJB120G08A

更新时间： 2024-11-16 17:02:03

品牌	Logo	应用领域
扬杰 - YANGJIE		/
页数	文件大小	规格书
8页	874K
描述
TO-263

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数据手册

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YJB120G08A 数据手册

RoHS

COMPLIANT

YJB120G08A

N-Channel Enhancement Mode Field Effect Transistor

Product Summary

● V_DS

80V

● I_D

120A

● R_DS(ON)( at V_GS=10V)

● 100% EAS Tested

● 100% ▽VDS Tested

＜4.5mohm

General Description

● Split gate trench MOSFET technology

● Excellent package for heat dissipation

● High density cell design for low R_DS(ON)

● Moisture Sensitivity Level 1

● Epoxy Meets UL 94 V-0 Flammability Rating

● Halogen Free

Applications

● Battery protection

● Load switch

● Uninterruptible power supply

Absolute Maximum Ratings (T =25℃unless otherwise noted)

■

Parameter

Symbol

Limit

Unit

Drain-source Voltage

Gate-source Voltage

V_DS

V_GS

±20

T_A=25℃

9.5

T_A=100℃

T_C=25℃

Drain Current

I_D

120

Tc=100℃

Pulsed Drain Current ^A

Avalanche energy ^B

I_DM

480

EAS

506

1.72

0.69

208

T_A=25℃

T_A=100℃

Tc=25℃

Tc=100℃

Total Power Dissipation ^C

P_D

83.3

-55～+150

Junction and Storage Temperature Range

T_J,T_STG

℃

■Thermal resistance

Parameter

Symbol

R_θJA

Limit

14.88

72.28

0.6

Units

℃/W

t≤10S

Thermal Resistance Junction-to-Ambient ^D

Thermal Resistance Junction-to-Case

Steady-State

R_θJC

Ordering Information (Example)

■

PACKING

MINIMUM

PACKAGE(pcs)

INNER BOX

QUANTITY(pcs)

OUTER CARTON

QUANTITY(pcs)

PREFERED P/N

Marking

DELIVERY MODE

CODE

YJB120G08A

800

8000

13“ reel

1 / 8

S-E153

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

Rev.1.2,2-Jun-23

12 3 4 5 6 7 8

中文翻译

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