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VS-HFA08TA60CSPBF

更新时间： 2024-02-26 16:14:05
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
8页 179K
描述
Rectifier Diode, 1 Phase, 2 Element, 4A, Silicon, D2PAK-3

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VS-HFA08TA60CSPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-263
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.35
其他特性：LOW NOISE应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：25 A
元件数量：2相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：4 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大反向恢复时间：0.042 µs
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：10Base Number Matches：1

VS-HFA08TA60CSPBF 数据手册

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VS-HFA08TA60CSPbF  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 4 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Specified at operating conditions  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• AEC-Q101 qualified  
D2PAK  
• Material categorization: For definitions of  
compliance please see www.vishay.com/doc?99912  
Base  
common  
cathode  
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
2
1
3
Common  
cathode  
Anode  
Anode  
• Reduced parts count  
DESCRIPTION  
VS-HFA08TA60CSPbF is a state of the art center tap  
ultrafast recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and 4 A per  
leg continuous current, the VS-HFA08TA60CSPbF is  
especially well suited for use as the companion diode for  
IGBTs and MOSFETs. In addition to ultrafast recovery time,  
the HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED VS-HFA08TA60CSPbF is ideally suited for  
applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
IF(AV)  
8 A  
600 V  
VR  
VF at IF  
2.2 V  
trr (typ.)  
TJ max.  
Diode variation  
17 ns  
150 °C  
Common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
4
Maximum continuous forward current  
IF  
TC = 100 °C  
8
A
Single pulse forward current  
IFSM  
IFRM  
25  
Maximum repetitive forward current  
16  
TC = 25 °C  
25  
10  
Maximum power dissipation  
PD  
W
TC = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Revision: 27-Aug-12  
Document Number: 94596  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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