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VS-HFA15TB60-1-M3

更新时间： 2024-12-02 14:52:51
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
9页 250K
描述
HEXFRED?, Ultrafast Soft Recovery Diode, 15 A

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VS-HFA15TB60-1-M3 技术参数

是否Rohs认证： 符合生命周期：Active
Reach Compliance Code：unknownFactory Lead Time：22 weeks
风险等级：5.69其他特性：LOW NOISE, PD-CASE
应用：EFFICIENCY配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2 VJEDEC-95代码：TO-262AA
JESD-30 代码：R-PSIP-T3最大非重复峰值正向电流：150 A
元件数量：1相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：15 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：IN-LINE峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：74 W最大重复峰值反向电压：600 V
最大反向电流：10 µA最大反向恢复时间：0.06 µs
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-HFA15TB60-1-M3 数据手册

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VS-HFA15TB60S-M3, VS-HFA15TB60-1-M3  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®,  
Ultrafast Soft Recovery Diode, 15 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 245 °C  
2
1
1
• Designed and qualified for industrial level  
3
2
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
D2PAK (TO-263AB)  
3
TO-262AA  
Base  
cathode  
2
BENEFITS  
2
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
1
N/C  
3
3
1
N/C  
Anode  
Anode  
• Reduced parts count  
VS-HFA15 TB60S-M3  
VS-HFA15 TB60-1-M3  
DESCRIPTION  
VS-HFA15TB60S, VS-HFA15TB60-1 is a state of the art  
ultrafast recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and  
PRIMARY CHARACTERISTICS  
IF(AV)  
15 A  
600 V  
1.2 V  
VR  
VF at IF  
trr (typ.)  
TJ max.  
23 ns  
15  
A
continuous current, the VS-HFA15TB60S,  
150 °C  
VS-HFA15TB60-1 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
Package  
D2PAK (TO-263AB), TO-262AA  
Single  
Circuit configuration  
heatsink  
sizes.  
The  
HEXFRED  
VS-HFA15TB60S,  
VS-HFA15TB60-1 is ideally suited for applications in power  
supplies and power conversion systems (such as inverters),  
motor drives, and many other similar applications where  
high speed, high efficiency is needed.  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
15  
IFSM  
IFRM  
150  
A
Maximum repetitive forward current  
60  
74  
TC = 25 °C  
Maximum power dissipation  
PD  
W
TC = 100 °C  
29  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
°C  
Revision: 16-Dec-2021  
Document Number: 96313  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567...9

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