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VS-HFA140NJ60CPbF

更新时间： 2024-11-06 14:56:03
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威世 - VISHAY /
页数 文件大小 规格书
7页 156K
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HEXFRED? Ultrafast Soft Recovery Diode, 167 A

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VS-HFA140NJ60CPbF  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 167 A  
FEATURES  
• Very low Qrr and trr  
Lug  
Lug  
• UL approved file E222165  
terminal  
anode 1  
terminal  
anode 2  
• Designed and qualified for industrial level  
• Material categorization: for definitions of compliance  
please see www.vishay.com/doc?99912  
BENEFITS  
Base common  
cathode  
• Reduced RFI and EMI  
• Reduced snubbing  
TO-244  
DESCRIPTION / APPLICATIONS  
PRIMARY CHARACTERISTICS  
HEXFRED® diodes are optimized to reduce losses and  
EMI/RFI in high frequency power conditioning systems. An  
extensive characterization of the recovery behavior for  
different values of current, temperature and dIF/dt simplifies  
the calculations of losses in the operating conditions. The  
softness of the recovery eliminates the need for a snubber in  
most applications. These devices are ideally suited for  
power converters, motors drives and other applications  
where switching losses are significant portion of the total  
losses.  
IF (maximum)  
167 A  
600 V  
VR  
I
F(DC) at TC  
Package  
84 A at 100 °C  
TO-244  
Circuit configuration  
Two diodes common cathode  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
600  
UNITS  
Cathode to anode voltage  
VR  
V
TC = 25 °C  
C = 100 °C  
167  
Continuous forward current  
IF  
T
84  
A
Single pulse forward current  
IFSM  
EAS  
Limited by junction temperature  
L = 100 μH, duty cycle limited by maximum TJ  
TC = 25 °C  
400  
Non-repetitive avalanche energy  
330  
μJ  
W
310  
Maximum power dissipation  
PD  
TC = 100 °C  
132  
Operating junction and storage  
temperature range  
TJ, TStg  
-55 to +150  
°C  
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Cathode to anode  
breakdown voltage  
VBR  
IR = 100 μA  
600  
-
-
IF = 70 A  
-
-
-
-
-
-
1.37  
1.58  
1.29  
1.2  
1.89  
2.1  
1.54  
4
V
Maximum forward voltage  
VFM  
IF = 140 A  
See fig. 1  
IF = 70 A, TJ = 125 °C  
TJ = 125 °C, VR = 480 V  
VR = 200 V  
Maximum reverse leakage current  
Junction capacitance  
IRM  
CT  
LS  
See fig. 2  
See fig. 3  
mA  
pF  
140  
7.0  
250  
-
Series inductance  
From top of terminal hole to mounting plane  
nH  
Revision: 05-Jan-18  
Document Number: 94051  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
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