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VS-HFA12PA120C-N3

更新时间： 2024-09-25 14:55:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 156K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 2 x 6 A

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VS-HFA12PA120C-N3 技术参数

生命周期：Active包装说明：R-PSFM-T3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.7
其他特性：LOW NOISE, PD-CASE应用：EFFICIENCY
外壳连接：CATHODE配置：COMMON CATHODE, 2 ELEMENTS
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：3.9 VJEDEC-95代码：TO-247AC
JESD-30 代码：R-PSFM-T3最大非重复峰值正向电流：80 A
元件数量：2相数：1
端子数量：3最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：6 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：62.5 W最大重复峰值反向电压：1200 V
最大反向电流：5 µA最大反向恢复时间：0.08 µs
表面贴装：NO端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED

VS-HFA12PA120C-N3 数据手册

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VS-HFA12PA120C-N3  
www.vishay.com  
Vishay Semiconductors  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 6 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Designed and qualified according to  
1
JEDEC®-JESD 47  
2
• Material categorization:  
for definitions of compliance please see  
3
TO-247AC 3L  
www.vishay.com/doc?99912  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
Common  
cathode  
2, Base  
• Reduced parts count  
DESCRIPTION  
VS-HFA12PA120C... is a state of the art center tap ultrafast  
recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. The VS-HFA12PA120C... has basic  
ratings of 1200 V and 6 A per leg continuous current. In  
addition to ultrafast recovery time, the HEXFRED® product  
line features extremely low values of peak recovery current  
(IRRM) and does not exhibit any tendency to “snap-off”  
during the tb portion of recovery. The HEXFRED features  
combine to offer designers a rectifier with lower noise and  
significantly lower switching losses in both the diode and the  
switching transistor. These HEXFRED advantages can help  
to significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED VS-HFA12PA120C... is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters, converters, UPS  
systems, and power factor correction circuits), motor drives,  
and many other similar applications where high speed, high  
efficiency is needed.  
1
3
Anode  
1
Anode  
2
PRIMARY CHARACTERISTICS  
IF(AV)  
2 x 6 A  
1200 V  
VR  
VF at IF  
2.4 V  
t
rr typ.  
26 ns  
TJ max.  
Package  
150 °C  
TO-247AC 3L  
Common cathode  
Circuit configuration  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
1200  
V
per leg  
per device  
6
Maximum continuous forward current  
IF  
TC = 100 °C  
tp = 10 ms  
12  
A
Single pulse forward current  
IFSM  
IFRM  
80  
24  
Maximum repetitive forward current  
TC = 25 °C  
62.5  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
25  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
°C  
Revision: 11-Oct-2019  
Document Number: 94597  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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