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VS-HFA08TB120STRRPBF

更新时间： 2024-02-29 15:11:21
品牌 Logo 应用领域
威世 - VISHAY 功效二极管
页数 文件大小 规格书
8页 148K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3

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VS-HFA08TB120STRRPBF 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete零件包装代码：TO-263
包装说明：R-PSSO-G2针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.27
其他特性：LOW NOISE应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
JESD-30 代码：R-PSSO-G2JESD-609代码：e3
湿度敏感等级：1最大非重复峰值正向电流：130 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
认证状态：Not Qualified最大反向恢复时间：0.095 µs
表面贴装：YES端子面层：Matte Tin (Sn) - with Nickel (Ni) barrier
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：10Base Number Matches：1

VS-HFA08TB120STRRPBF 数据手册

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VS-HFA08TB120SPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 8 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
Base  
cathode  
2
• Very low Qrr  
• Specified at operating conditions  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Halogen-free according to IEC 61249-2-21  
definition  
1
N/C  
3
D2PAK  
Anode  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
PRODUCT SUMMARY  
DESCRIPTION  
VR  
VF at 8 A at 25 °C  
IF(AV)  
1200 V  
3.3 V  
VS-HFA08TB120S is a state of the art ultrafast recovery  
diode. Employing the latest in epitaxial construction and  
advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 1200 V and 8 A continuous current, the  
VS-HFA08TB120S is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED VS-HFA08TB120S is ideally  
suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
many other similar applications where high speed, high  
efficiency is needed.  
8 A  
t
rr (typical)  
TJ (maximum)  
rr (typical)  
dI(rec)M/dt (typical) at 125 °C  
RRM (typical)  
28 ns  
150 °C  
140 nC  
85 A/μs  
4.5 A  
Q
I
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
1200  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
8
IFSM  
IFRM  
130  
A
Maximum repetitive forward current  
32  
73.5  
TC = 25 °C  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
29  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 94046  
Revision: 22-Feb-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
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