Datasheet > VS-HFA08TB60HN3

VS-HFA08TB60HN3

更新时间： 2023-12-06 20:10:13

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
7页	173K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 8 A

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VS-HFA08TB60HN3 数据手册

VS-HFA08TB60HN3

Vishay Semiconductors

www.vishay.com

HEXFRED^®

Ultrafast Soft Recovery Diode, 8 A

FEATURES

• Ultrafast and ultrasoft recovery

• Very low I_RRMand Q_rr

• AEC-Q101 qualified meets JESD 201 class 2

whisker test

• Material categorization:

for definitions of compliance please see

www.vishay.com/doc?99912

TO-220AC

BENEFITS

Base

cathode

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

Cathode Anode

DESCRIPTION

VS-HFA08TB60... is a state of the art ultrafast recovery

diode. Employing the latest in epitaxial construction and

advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 600 V and 8 A continuous current, the

VS-HFA08TB60... is especially well suited for use as the

companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED^®product line features

extremely low values of peak recovery current (I_RRM) and

does not exhibit any tendency to “snap-off” during the t_b

portion of recovery. The HEXFRED features combine to offer

designers a rectifier with lower noise and significantly lower

switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly reduce snubbing, component count and

heatsink sizes. The HEXFRED VS-HFA08TB60... is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRODUCT SUMMARY

Package

TO-220AC

8 A

I_F(AV)

V_R

600 V

V_Fat I_F

1.4 V

t_rrtyp.

18 ns

T_Jmax.

Diode variation

150 °C

Single die

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_R

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

600

Maximum continuous forward current

Single pulse forward current

I_F

T_C= 100 °C

I_FSM

I_FRM

Maximum repetitive forward current

T_C= 25 °C

Maximum power dissipation

P_D

T_C= 100 °C

Operating junction and storage temperature range

T_J, T_Stg

-55 to +150

°C

Revision: 15-Jul-15

Document Number: 94970

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7

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与VS-HFA08TB60HN3相关器件

型号	品牌	获取价格	描述	数据表
VS-HFA08TB60-M3	VISHAY	获取价格	HEXFRED? Ultrafast Soft Recovery Diode, 8 A
VS-HFA08TB60-N3	VISHAY	获取价格	DIODE RECTIFIER DIODE, Rectifier Diode
VS-HFA08TB60S-M3	VISHAY	获取价格	HEXFRED? Ultrafast Soft Recovery Diode, 8 A
VS-HFA08TB60SPBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-HFA08TB60STRLP	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-HFA08TB60STRRP	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2
VS-HFA120FA60P	VISHAY	获取价格	Rectifier Diode, 1 Phase, 2 Element, 75A, 600V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-4
VS-HFA12PA120C-N3	VISHAY	获取价格	HEXFRED? Ultrafast Soft Recovery Diode, 2 x 6 A
VS-HFA12PA120CPBF	VISHAY	获取价格	DIODE 6 A, SILICON, RECTIFIER DIODE, TO-247AC, ROHS COMPLIANT, PLASTIC PACKAGE-3, Rectifie
VS-HFA135NH40PBF	VISHAY	获取价格	Rectifier Diode, 1 Phase, 1 Element, 275A, 400V V(RRM), Silicon, ROHS COMPLIANT, D-67, HAL

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