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VS-HFA120FA60P

更新时间： 2024-09-24 15:57:47
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
8页 880K
描述
Rectifier Diode, 1 Phase, 2 Element, 75A, 600V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-4

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VS-HFA120FA60P 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Obsolete包装说明：R-PUFM-X4
针数：4Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8541.10.00.80
风险等级：5.84其他特性：UL RECOGNIZED
应用：ULTRA FAST SOFT RECOVERY外壳连接：ISOLATED
配置：SEPARATE, 2 ELEMENTS二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：2.1 V
JESD-30 代码：R-PUFM-X4最大非重复峰值正向电流：800 A
元件数量：2相数：1
端子数量：4最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：75 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT APPLICABLE
最大功率耗散：180 W最大重复峰值反向电压：600 V
最大反向电流：20 µA最大反向恢复时间：0.098 µs
表面贴装：NO端子面层：NICKEL (197)
端子形式：UNSPECIFIED端子位置：UPPER
处于峰值回流温度下的最长时间：NOT APPLICABLEBase Number Matches：1

VS-HFA120FA60P 数据手册

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VS-HFA120FA60P  
Vishay Semiconductors  
www.vishay.com  
HEXFRED® Ultrafast Soft Recovery Diode, 60 A  
FEATURES  
• Fast recovery time characteristic  
• Electrically isolated base plate  
• Large creepage distance between terminal  
• Simplified mechanical designs, rapid assembly  
• UL approved file E78996  
• Designed for industrial level  
SOT-227  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
DESCRIPTION  
PRODUCT SUMMARY  
This SOT-227 modules with HEXFRED® rectifier are  
available in two basic configurations. They are the  
antiparallel and the parallel configurations. The antiparallel  
configuration (VS-HFA120EA60) is used for simple series  
rectifier and high voltage application. The parallel  
configuration (VS-HFA120FA60) is used for simple parallel  
rectifier and high current application. The semiconductor in  
the SOT-227 package is isolated from the copper base  
plate, allowing for common heatsinks and compact  
assemblies to be built. These modules are intended for  
general applications such as power supplies, battery  
chargers, electronic welders, motor control, DC chopper,  
and inverters.  
VR  
600 V  
1.4 V  
VF (typical) at 125 °C  
Q
rr (typical)  
IRRM (typical)  
rr (typical)  
dI(rec)M/dt (typical) at 125 °C  
270 nC  
7.0 A  
t
65 ns  
270 A/μs  
I
F(DC) at TC  
Package  
40 A at 100 °C  
SOT-227  
Circuit configuration  
Two separate diodes  
ABSOLUTE MAXIMUM RATINGS PER LEG  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
600  
UNITS  
Cathode to anode voltage  
VR  
V
TC = 25 °C  
75  
Continuous forward current  
IF  
TC = 100 °C  
40  
A
Single pulse forward current  
IFSM  
IFRM  
TJ = 25 °C  
800  
Maximum repetitive forward current  
RMS isolation voltage, any terminal to case  
Rated VR, square wave, 20 kHz, TC = 60 °C  
180  
VISOL  
t = 1 minute  
TC = 25 °C  
2500  
180  
V
Maximum power dissipation  
PD  
W
°C  
T
C = 100 °C  
71  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to 150  
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
-
MAX.  
UNITS  
Cathode to anode breakdown voltage  
VBR  
IR = 100 μA  
IF = 60 A  
600  
-
-
-
-
-
-
-
1.5  
1.9  
1.4  
2.5  
130  
120  
1.7  
2.1  
1.6  
20  
V
Maximum forward voltage  
VFM  
IF = 120 A  
See fig. 1  
IF = 60 A, TJ = 125 °C  
VR = VR rated  
Maximum reverse leakage current  
Junction capacitance  
IRM  
CT  
See fig. 2  
See fig. 3  
μA  
pF  
TJ = 125 °C, VR = 0.8 x VR rated  
VR = 200 V  
2000  
170  
Revision: 22-Jul-13  
Document Number: 94049  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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