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VS-HFA08TB60S-M3

更新时间： 2024-12-02 14:54:35
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
7页 197K
描述
HEXFRED? Ultrafast Soft Recovery Diode, 8 A

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VS-HFA08TB60S-M3 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：R-PSSO-G2Reach Compliance Code：unknown
Factory Lead Time：22 weeks风险等级：1.67
其他特性：LOW NOISE, PD-CASE应用：EFFICIENCY
外壳连接：CATHODE配置：SINGLE
二极管元件材料：SILICON二极管类型：RECTIFIER DIODE
最大正向电压 (VF)：2.1 VJEDEC-95代码：TO-263AB
JESD-30 代码：R-PSSO-G2最大非重复峰值正向电流：60 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：8 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
最大功率耗散：36 W最大重复峰值反向电压：600 V
最大反向电流：5 µA最大反向恢复时间：0.055 µs
表面贴装：YES端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

VS-HFA08TB60S-M3 数据手册

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VS-HFA08TB60S-M3  
Vishay Semiconductors  
www.vishay.com  
HEXFRED®  
Ultrafast Soft Recovery Diode, 8 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Specified at operating conditions  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
2
1
3
BENEFITS  
D2PAK (TO-263AB)  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
Base  
cathode  
2
• Reduced parts count  
DESCRIPTION  
1
N/C  
3
VS-HFA08TB60S is a state of the art ultrafast recovery  
diode. Employing the latest in epitaxial construction and  
advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 600 V and 8 A continuous current, the  
VS-HFA08TB60S is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA08TB60S is ideally suited  
for applications in power supplies (PFC boost diode) and  
power conversion systems (such as inverters), motor drives,  
and many other similar applications where high speed, high  
efficiency is needed.  
Anode  
LINKS TO ADDITIONAL RESOURCES  
3
D
3
D
3D Models  
PRIMARY CHARACTERISTICS  
IF(AV)  
8 A  
VR  
600 V  
1.4 V  
VF at IF  
trr (typ.)  
TJ max.  
18 ns  
150 °C  
Package  
D2PAK (TO-263AB)  
Single  
MECHANICAL DATA  
Circuit configuration  
Case: D2PAK (TO-263AB)  
Molding compound meets UL 94 V-0 flammability rating  
Terminals: matte tin plated leads, solderable per  
J-STD-002  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
8
IFSM  
IFRM  
60  
A
Maximum repetitive forward current  
24  
36  
TC = 25 °C  
Maximum power dissipation  
PD  
W
TC = 100 °C  
14  
Operating junction and storage temperature range  
TJ, TStg  
-55 to +150  
°C  
Revision: 22-Nov-2022  
Document Number: 96219  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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