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VS-HFA08TB60SPBF

更新时间： 2024-12-01 14:45:35
品牌 Logo 应用领域
威世 - VISHAY 功效光电二极管
页数 文件大小 规格书
8页 642K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-263AB, D2PAK-3/2

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VS-HFA08TB60SPBF 技术参数

是否无铅：不含铅是否Rohs认证：符合
生命周期：Obsolete包装说明：R-PSSO-G2
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：7.88
Is Samacsys：N其他特性：PD-CASE
应用：EFFICIENCY外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：2.1 V
JEDEC-95代码：TO-263ABJESD-30 代码：R-PSSO-G2
JESD-609代码：e3湿度敏感等级：1
最大非重复峰值正向电流：60 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：260最大功率耗散：36 W
参考标准：AEC-Q101最大重复峰值反向电压：600 V
最大反向电流：5 µA最大反向恢复时间：0.055 µs
表面贴装：YES端子面层：MATTE TIN OVER NICKEL
端子形式：GULL WING端子位置：SINGLE
处于峰值回流温度下的最长时间：10Base Number Matches：1

VS-HFA08TB60SPBF 数据手册

 浏览型号VS-HFA08TB60SPBF的Datasheet PDF文件第2页浏览型号VS-HFA08TB60SPBF的Datasheet PDF文件第3页浏览型号VS-HFA08TB60SPBF的Datasheet PDF文件第4页浏览型号VS-HFA08TB60SPBF的Datasheet PDF文件第5页浏览型号VS-HFA08TB60SPBF的Datasheet PDF文件第6页浏览型号VS-HFA08TB60SPBF的Datasheet PDF文件第7页 
VS-HFA08TB60SPbF  
Vishay Semiconductors  
www.vishay.com  
HEXFRED®  
Ultrafast Soft Recovery Diode, 8 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• Specified at operating conditions  
• AEC-Q101 qualified  
• Material categorization:  
For definitions of compliance please see  
www.vishay.com/doc?99912  
Base  
cathode  
+
2
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
Anode  
1
3
N/C  
-
D2PAK  
• Reduced parts count  
DESCRIPTION  
VS-HFA08TB60S is a state of the art ultrafast recovery  
diode. Employing the latest in epitaxial construction and  
advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 600 V and 8 A continuous current, the  
VS-HFA08TB60S is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED HFA08TB60S is ideally suited  
for applications in power supplies (PFC boost diode) and  
power conversion systems (such as inverters), motor drives,  
and many other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
Package  
TO-263AB (D2PAK)  
8 A  
IF(AV)  
VR  
600 V  
VF at IF  
1.7 V  
trr (typ.)  
TJ max.  
Diode variation  
18 ns  
150 °C  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
8
IFSM  
IFRM  
60  
A
Maximum repetitive forward current  
24  
TC = 25 °C  
36  
14  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Revision: 07-Sep-12  
Document Number: 94048  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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