VS-HFA08TA60CSPbF
Vishay High Power Products
HEXFRED®
Ultrafast Soft Recovery Diode, 2 x 4 A
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low IRRM
• Very low Qrr
Base
common
cathode
2
• Specified at operating conditions
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
2
1
3
D2PAK
Common
cathode
Anode
Anode
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA08TA60CSPbF is a state of the art center tap
ultrafast recovery diode. Employing the latest in epitaxial
construction and advanced processing techniques it
features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and 4 A per
leg continuous current, the VS-HFA08TA60CSPbF is
especially well suited for use as the companion diode for
IGBTs and MOSFETs. In addition to ultrafast recovery time,
the HEXFRED® product line features extremely low values of
peak recovery current (IRRM) and does not exhibit any
tendency to “snap-off” during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier
with lower noise and significantly lower switching losses in
both the diode and the switching transistor. These
HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The
HEXFRED VS-HFA08TA60CSPbF is ideally suited for
applications in power supplies and power conversion
systems (such as inverters), motor drives, and many other
similar applications where high speed, high efficiency is
needed.
PRODUCT SUMMARY
VR
VF at 4 A at 25 °C
IF(AV)
600 V
1.8 V
2 x 4 A
17 ns
t
rr (typical)
TJ (maximum)
Qrr
150 °C
40 nC
dI(rec)M/dt
280 A/μs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Cathode to anode voltage
VR
600
V
per leg
per device
4
Maximum continuous forward current
IF
TC = 100 °C
8
A
Single pulse forward current
IFSM
IFRM
25
Maximum repetitive forward current
16
TC = 25 °C
25
10
Maximum power dissipation
PD
W
T
C = 100 °C
Operating junction and storage temperature range
TJ, TStg
- 55 to + 150
°C
Document Number: 94596
Revision: 24-Feb-10
For technical questions, contact: diodestech@vishay.com
www.vishay.com
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