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VS-HFA08TA60CSTRRPBF

更新时间： 2023-04-15 00:00:00
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
8页 186K
描述
Rectifier Diode, 1 Phase, 2 Element, 4A, Silicon, HALOGEN FREE AND ROHS COMPLIANT, D2PAK-3

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VS-HFA08TA60CSTRRPBF 数据手册

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VS-HFA08TA60CSPbF  
Vishay High Power Products  
HEXFRED®  
Ultrafast Soft Recovery Diode, 2 x 4 A  
FEATURES  
• Ultrafast recovery  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
Base  
common  
cathode  
2
• Specified at operating conditions  
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Halogen-free according to IEC 61249-2-21  
definition  
• Compliant to RoHS directive 2002/95/EC  
• AEC-Q101 qualified  
2
1
3
D2PAK  
Common  
cathode  
Anode  
Anode  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
• Reduced parts count  
DESCRIPTION  
VS-HFA08TA60CSPbF is a state of the art center tap  
ultrafast recovery diode. Employing the latest in epitaxial  
construction and advanced processing techniques it  
features a superb combination of characteristics which  
result in performance which is unsurpassed by any rectifier  
previously available. With basic ratings of 600 V and 4 A per  
leg continuous current, the VS-HFA08TA60CSPbF is  
especially well suited for use as the companion diode for  
IGBTs and MOSFETs. In addition to ultrafast recovery time,  
the HEXFRED® product line features extremely low values of  
peak recovery current (IRRM) and does not exhibit any  
tendency to “snap-off” during the tb portion of recovery. The  
HEXFRED features combine to offer designers a rectifier  
with lower noise and significantly lower switching losses in  
both the diode and the switching transistor. These  
HEXFRED advantages can help to significantly reduce  
snubbing, component count and heatsink sizes. The  
HEXFRED VS-HFA08TA60CSPbF is ideally suited for  
applications in power supplies and power conversion  
systems (such as inverters), motor drives, and many other  
similar applications where high speed, high efficiency is  
needed.  
PRODUCT SUMMARY  
VR  
VF at 4 A at 25 °C  
IF(AV)  
600 V  
1.8 V  
2 x 4 A  
17 ns  
t
rr (typical)  
TJ (maximum)  
Qrr  
150 °C  
40 nC  
dI(rec)M/dt  
280 A/μs  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
VR  
600  
V
per leg  
per device  
4
Maximum continuous forward current  
IF  
TC = 100 °C  
8
A
Single pulse forward current  
IFSM  
IFRM  
25  
Maximum repetitive forward current  
16  
TC = 25 °C  
25  
10  
Maximum power dissipation  
PD  
W
T
C = 100 °C  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Document Number: 94596  
Revision: 24-Feb-10  
For technical questions, contact: diodestech@vishay.com  
www.vishay.com  
1
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