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VS-HFA08TB120HN3 PDF预览

VS-HFA08TB120HN3

更新时间： 2024-02-03 13:29:07
品牌 Logo 应用领域
威世 - VISHAY 超快软恢复二极管快速软恢复二极管局域网
页数 文件大小 规格书
7页 149K
描述
Rectifier Diode, 1 Phase, 1 Element, 8A, 1200V V(RRM), Silicon, TO-220AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2

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VS-HFA08TB120HN3 技术参数

生命周期：Active包装说明：HALOGEN FREE AND ROHS COMPLIANT, PLASTIC PACKAGE-2
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.69
应用：ULTRA FAST SOFT RECOVERY外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：4.3 V
JEDEC-95代码：TO-220ACJESD-30 代码：R-PSFM-T2
最大非重复峰值正向电流：130 A元件数量：1
相数：1端子数量：2
最高工作温度：150 °C最低工作温度：-55 °C
最大输出电流：8 A封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
最大功率耗散：73.5 W参考标准：AEC-Q101
最大重复峰值反向电压：1200 V最大反向电流：10 µA
最大反向恢复时间：0.063 µs表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
Base Number Matches：1

VS-HFA08TB120HN3 数据手册

 浏览型号VS-HFA08TB120HN3的Datasheet PDF文件第2页浏览型号VS-HFA08TB120HN3的Datasheet PDF文件第3页浏览型号VS-HFA08TB120HN3的Datasheet PDF文件第4页浏览型号VS-HFA08TB120HN3的Datasheet PDF文件第5页浏览型号VS-HFA08TB120HN3的Datasheet PDF文件第6页浏览型号VS-HFA08TB120HN3的Datasheet PDF文件第7页 
VS-HFA08TB120HN3  
Vishay Semiconductors  
www.vishay.com  
HEXFRED®  
Ultrafast Soft Recovery Diode, 8 A  
FEATURES  
• Ultrafast and ultrasoft recovery  
• Very low IRRM and Qrr  
• AEC-Q101 qualified, meets JESD 201 class 2  
whisker test  
2
• Material categorization:  
For definitions of compliance please see  
3
www.vishay.com/doc?99912  
1
TO-220AC  
BENEFITS  
• Reduced RFI and EMI  
Cathode  
to base  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
2
• Reduced parts count  
DESCRIPTION  
3
1
Anode  
Cathode  
VS-HFA08TB120HN3 is a state of the art ultrafast recovery  
diode. Employing the latest in epitaxial construction and  
advanced processing techniques it features a superb  
combination of characteristics which result in performance  
which is unsurpassed by any rectifier previously available.  
With basic ratings of 1200 V and 8 A continuous current, the  
VS-HFA08TB120HN3 is especially well suited for use as the  
companion diode for IGBTs and MOSFETs. In addition to  
ultrafast recovery time, the HEXFRED® product line features  
extremely low values of peak recovery current (IRRM) and  
does not exhibit any tendency to “snap-off” during the tb  
portion of recovery. The HEXFRED features combine to offer  
designers a rectifier with lower noise and significantly lower  
switching losses in both the diode and the switching  
transistor. These HEXFRED advantages can help to  
significantly reduce snubbing, component count and  
heatsink sizes. The HEXFRED VS-HFA08TB120HN3 is  
ideally suited for applications in power supplies and power  
conversion systems (such as inverters), motor drives, and  
mumany other similar applications where high speed, high  
efficiency is needed.  
PRODUCT SUMMARY  
Package  
TO-220AC  
8 A  
IF(AV)  
VR  
1200 V  
3.3 V  
VF at IF  
t
rr typ.  
28 ns  
TJ max.  
150 °C  
Single die  
Diode variation  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VR  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
1200  
V
Maximum continuous forward current  
Single pulse forward current  
IF  
TC = 100 °C  
8
IFSM  
IFRM  
130  
A
Maximum repetitive forward current  
32  
73.5  
TC = 25 °C  
Maximum power dissipation  
PD  
W
TC = 100 °C  
29  
Operating junction and storage temperature range  
TJ, TStg  
- 55 to + 150  
°C  
Revision: 30-Sep-13  
Document Number: 94718  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
1234567

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