Datasheet > VND10BSP13TR

VND10BSP13TR

更新时间： 2022-01-18 22:27:00

品牌	Logo	应用领域
其他 - ETC		继电器固态继电器
页数	文件大小	规格书
9页	219K
描述
DOUBLE CHANNEL HIGH SIDE SMART POWER SOLID STATE RELAY

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

VND10BSP13TR 数据手册

VND10BSP

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

TYPE

V_DSS

R_DS(on

)

I_OUT

V_CC

VND10BSP

40 V

0.1 Ω

3.4 A

26 V

■

OUTPUT CURRENT (CONTINUOUS):

14A @ T_c= 85^oC PER CHANNEL

5V LOGIC LEVEL COMPATIBLE INPUT

THERMAL SHUT-DOWN

UNDER VOLTAGE PROTECTION

OPEN DRAIN DIAGNOSTIC OUTPUT

INDUCTIVE LOAD FAST

■

DEMAGNETIZATION

■

VERY LOW STAND-BY POWER

DISSIPATION

DESCRIPTION

PowerSO-10

The VND10BSP is a monolithic device made

using SGS-THOMSON Vertical Intelligent Power

Technology, intended for driving resistive or

inductive loads with one side grounded. This

device has two channels, and a common

diagnostic. Built-in thermal shut-down protects

the chip from over temperature and short circuit.

The status output provides an indication of open

load in on

state, open load in off state,

overtemperature conditions and stuck-on to V_CC

BLOCK DIAGRAM

1/9

March 1998

12 3 4 5 6 7...9

下载PDF

与VND10BSP13TR相关器件

型号	品牌	描述	获取价格	数据表
VND10BSPTR-E	STMICROELECTRONICS	ISO HIGH SIDE SMART POWER SOLID STATE RELAY	获取价格
VND10N06	STMICROELECTRONICS	ISO HIGH SIDE SMART POWER SOLID STATE RELAY	获取价格
VND10N06-1	STMICROELECTRONICS	ISO HIGH SIDE SMART POWER SOLID STATE RELAY	获取价格
VND10N0613TR	STMICROELECTRONICS	OMNIFET :FULLY AUTOPROTECTED POWER MOSFET	获取价格
VND10N06-1-E	STMICROELECTRONICS	OMNIFET :FULLY AUTOPROTECTED POWER MOSFET	获取价格
VND10N06TR	STMICROELECTRONICS	10A BUF OR INV BASED PRPHL DRVR, PSSO2, ROHS COMPLIANT, TO-252, DPAK-3/2	获取价格