品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
31页 | 1268K | |
描述 | ||
OMNIFET II fully autoprotected Power MOSFET |
是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-252 | 包装说明: | TO-252, |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 0.8 | 内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL |
接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 长度: | 6.5 mm |
湿度敏感等级: | 3 | 功能数量: | 1 |
端子数量: | 2 | 输出电流流向: | SINK |
标称输出峰值电流: | 18 A | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TO-252 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
认证状态: | Not Qualified | 座面最大高度: | 2.63 mm |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | GULL WING | 端子节距: | 2.25 mm |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
断开时间: | 25 µs | 接通时间: | 4.5 µs |
宽度: | 6.1 mm | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
VND14NV04-E | STMICROELECTRONICS |
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