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VND10N06-1-E PDF预览

VND10N06-1-E

更新时间: 2024-10-28 13:15:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 外围驱动器驱动程序和接口接口集成电路继电器固态继电器
页数 文件大小 规格书
14页 170K
描述
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

VND10N06-1-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliantFactory Lead Time:20 weeks
风险等级:5.68接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVER
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

VND10N06-1-E 数据手册

 浏览型号VND10N06-1-E的Datasheet PDF文件第2页浏览型号VND10N06-1-E的Datasheet PDF文件第3页浏览型号VND10N06-1-E的Datasheet PDF文件第4页浏览型号VND10N06-1-E的Datasheet PDF文件第5页浏览型号VND10N06-1-E的Datasheet PDF文件第6页浏览型号VND10N06-1-E的Datasheet PDF文件第7页 
VND10N06/VND10N06-1  
VNP10N06FI/K10N06FM  
”OMNIFET”:  
FULLY AUTOPROTECTED POWER MOSFET  
TYPE  
Vclamp  
RDS(on )  
Ilim  
VND10N06  
60 V  
60 V  
60 V  
60 V  
0.3  
0.3 Ω  
0.3 Ω  
0.3 Ω  
10 A  
10 A  
10 A  
10 A  
VND10N06-1  
VNP10N06FI  
VNK10N06FM  
3
3
1
2
LINEAR CURRENT LIMITATION  
THERMAL SHUT DOWN  
SHORT CIRCUIT PROTECTION  
1
DPAK  
TO-252  
IPAK  
TO-251  
INTEGRATED CLAMP  
LOW CURRENT DRAWN FROM INPUT PIN  
LOGIC LEVEL INPUT THRESHOLD  
ESD PROTECTION  
SCHMITT TRIGGER ON INPUT  
HIGH NOISE IMMUNITY  
DESCRIPTION  
3
2
The VND10N06, VND10N06-1, VNP10N06FI and  
VNK10N06FM are monolithic devices made  
using SGS-THOMSON Vertical Intelligent Power  
M0 Technology, intended for replacement of  
standard power MOSFETS in DC to 50 KHz  
applications. Built-in thermal shut-down, linear  
current limitation and overvoltage clamp protect  
the chip in harsh enviroments.  
1
ISOWATT220  
SOT82-FM  
BLOCK DIAGRAM (*)  
( ) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.  
October 1997  
1/14  

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