Datasheet > 驱动程序和接口 > 外围驱动器> VND10N06-1-E

VND10N06-1-E

更新时间： 2024-02-03 13:12:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		外围驱动器驱动程序和接口接口集成电路继电器固态继电器
页数	文件大小	规格书
14页	170K
描述
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

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技术参数
数据手册

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VND10N06-1-E 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	compliant	Factory Lead Time：	20 weeks
风险等级：	5.68	接口集成电路类型：	BUFFER OR INVERTER BASED PERIPHERAL DRIVER
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

VND10N06-1-E 数据手册

VND10N06/VND10N06-1

VNP10N06FI/K10N06FM

”OMNIFET”:

FULLY AUTOPROTECTED POWER MOSFET

TYPE

V_clamp

R_{DS(on )}

I_lim

VND10N06

60 V

0.3 Ω

10 A

VND10N06-1

VNP10N06FI

VNK10N06FM

■

LINEAR CURRENT LIMITATION

THERMAL SHUT DOWN

SHORT CIRCUIT PROTECTION

DPAK

TO-252

IPAK

TO-251

INTEGRATED CLAMP

LOW CURRENT DRAWN FROM INPUT PIN

LOGIC LEVEL INPUT THRESHOLD

ESD PROTECTION

SCHMITT TRIGGER ON INPUT

HIGH NOISE IMMUNITY

DESCRIPTION

The VND10N06, VND10N06-1, VNP10N06FI and

VNK10N06FM are monolithic devices made

using SGS-THOMSON Vertical Intelligent Power

M0 Technology, intended for replacement of

standard power MOSFETS in DC to 50 KHz

applications. Built-in thermal shut-down, linear

current limitation and overvoltage clamp protect

the chip in harsh enviroments.

ISOWATT220

SOT82-FM

BLOCK DIAGRAM (*)

( ) SOT82-FM Pin Configuration: INPUT = 3; SOURCE = 1; DRAIN = 2.

October 1997

1/14

12 3 4 5 6 7...14

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