Datasheet > VND10N0613TR

VND10N0613TR

更新时间： 2024-01-02 09:59:50

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
25页	570K
描述
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

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技术参数
数据手册

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VND10N0613TR 技术参数

生命周期：	Obsolete	零件包装代码：	TO-252
包装说明：	,	针数：	3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8542.39.00.01	风险等级：	5.68
Base Number Matches：	1

VND10N0613TR 数据手册

VND10N06

VND10N06-1

"OMNIFET"

fully autoprotected Power MOSFET

Features

Max on-state resistance (per ch.)

Current limitation (typ)

R_DS(on)

I_lim

0.3Ω

10A

60V

Drain-Source clamp voltage

V_CLAMP

DPAK

IPAK

TO-252

TO-251

■ Linear current limitation

■ Thermal shutdown

■ Short circuit protection

■ Integrated clamp

Description

The VND10N06 and VND10N06-1 are monolithic

devices designed in STMicroelectronics VIPower

M0-2 technology, intended for replacement of

standard Power MOSFETs in DC to 50KHz

applications. Built in thermal shutdown, linear

current limitation and overvoltage clamp protect

the chip in harsh environments.

■ Low current drawn from input pin

■ Logic level input threshold

■ ESD protection

■ Schmitt trigger on input

■ High noise immunity

Table 1.

Device summary

Package

Order codes

Tube

VND10N06

Tape and reel

DPAK

IPAK

VND10N06TR

VND10N06-1

September 2013

Rev 4

1/25

www.st.com

12 3 4 5 6 7...25

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