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VND10N0613TR PDF预览

VND10N0613TR

更新时间: 2024-11-23 15:57:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
25页 570K
描述
OMNIFET :FULLY AUTOPROTECTED POWER MOSFET

VND10N0613TR 技术参数

生命周期:Obsolete零件包装代码:TO-252
包装说明:,针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.68
Base Number Matches:1

VND10N0613TR 数据手册

 浏览型号VND10N0613TR的Datasheet PDF文件第2页浏览型号VND10N0613TR的Datasheet PDF文件第3页浏览型号VND10N0613TR的Datasheet PDF文件第4页浏览型号VND10N0613TR的Datasheet PDF文件第5页浏览型号VND10N0613TR的Datasheet PDF文件第6页浏览型号VND10N0613TR的Datasheet PDF文件第7页 
VND10N06  
VND10N06-1  
"OMNIFET"  
fully autoprotected Power MOSFET  
Features  
Max on-state resistance (per ch.)  
Current limitation (typ)  
RDS(on)  
Ilim  
0.3  
10A  
60V  
3
3
2
1
1
Drain-Source clamp voltage  
VCLAMP  
DPAK  
IPAK  
TO-252  
TO-251  
Linear current limitation  
Thermal shutdown  
Short circuit protection  
Integrated clamp  
Description  
The VND10N06 and VND10N06-1 are monolithic  
devices designed in STMicroelectronics VIPower  
M0-2 technology, intended for replacement of  
standard Power MOSFETs in DC to 50KHz  
applications. Built in thermal shutdown, linear  
current limitation and overvoltage clamp protect  
the chip in harsh environments.  
Low current drawn from input pin  
Logic level input threshold  
ESD protection  
Schmitt trigger on input  
High noise immunity  
Table 1.  
Device summary  
Package  
Order codes  
Tube  
VND10N06  
Tape and reel  
DPAK  
IPAK  
VND10N06TR  
VND10N06-1  
September 2013  
Rev 4  
1/25  
www.st.com  
25  
 

VND10N0613TR 替代型号

型号 品牌 替代类型 描述 数据表
VND10N06 STMICROELECTRONICS

完全替代

ISO HIGH SIDE SMART POWER SOLID STATE RELAY

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