是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | ROHS COMPLIANT, DPAK, TO-252, 3 PIN |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8542.39.00.01 |
风险等级: | 5.13 | 内置保护: | TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL |
接口集成电路类型: | BUFFER OR INVERTER BASED PERIPHERAL DRIVER | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 长度: | 6.5 mm |
功能数量: | 1 | 端子数量: | 2 |
输出电流流向: | SINK | 标称输出峰值电流: | 1.7 A |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | TO-252 |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 2.63 mm | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子节距: | 2.25 mm | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 断开时间: | 5.5 µs |
接通时间: | 1 µs | 宽度: | 6.1 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
VND1NV04 | STMICROELECTRONICS |
完全替代 |
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE | |
VND1NV04-E | STMICROELECTRONICS |
类似代替 |
OMNIFET II fully autoprotected Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
VND1NV04-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VND1NV04TR | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VND3NV04 | STMICROELECTRONICS |
获取价格 |
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE | |
VND3NV04-1 | STMICROELECTRONICS |
获取价格 |
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFE | |
VND3NV0413TR | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VND3NV04-1-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VND3NV04-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VND3NV04TR-E | STMICROELECTRONICS |
获取价格 |
OMNIFET II fully autoprotected Power MOSFET | |
VND5004A-E | STMICROELECTRONICS |
获取价格 |
Double 4mヘ high side driver with analog curre | |
VND5004ASP30-E | STMICROELECTRONICS |
获取价格 |
Double 4mヘ high side driver with analog curre |