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VND3NV04 PDF预览

VND3NV04

更新时间: 2024-10-27 22:14:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
21页 419K
描述
“OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET

VND3NV04 数据手册

 浏览型号VND3NV04的Datasheet PDF文件第2页浏览型号VND3NV04的Datasheet PDF文件第3页浏览型号VND3NV04的Datasheet PDF文件第4页浏览型号VND3NV04的Datasheet PDF文件第5页浏览型号VND3NV04的Datasheet PDF文件第6页浏览型号VND3NV04的Datasheet PDF文件第7页 
VNN3NV04 / VNS3NV04  
/ VND3NV04 / VND3NV04-1  
®
“OMNIFET II”:  
FULLY AUTOPROTECTED POWER MOSFET  
TYPE  
R
I
V
clamp  
DS(on)  
lim  
2
VNN3NV04  
VNS3NV04  
VND3NV04  
3
120 mΩ  
3.5 A  
40 V  
2
1
SO-8  
SOT-223  
VND3NV04-1  
LINEAR CURRENT LIMITATION  
THERMAL SHUT DOWN  
SHORT CIRCUIT PROTECTION  
INTEGRATED CLAMP  
LOW CURRENT DRAWN FROM INPUT PIN  
DIAGNOSTIC FEEDBACK THROUGH INPUT  
PIN  
3
3
2
1
1
TO251 (IPAK)  
TO252 (DPAK)  
ORDER CODES:  
SOT-223  
SO-8  
VNN3NV04  
VNS3NV04  
VND3NV04  
VND3NV04-1  
TO-252 (DPAK)  
TO-251 (IPAK)  
ESD PROTECTION  
DIRECT ACCESS TO THE GATE OF THE  
POWER MOSFET (ANALOG DRIVING)  
intended for replacement of standard Power  
MOSFETS from DC up to 50KHz applications.  
Built in thermal shutdown, linear current limitation  
and overvoltage clamp protect the chip in harsh  
environments.  
COMPATIBLE WITH STANDARD POWER  
MOSFET  
DESCRIPTION  
The VNN3NV04, VNS3NV04, VND3NV04  
VND3NV04-1, are monolithic devices designed in  
STMicroelectronics VIPower M0-3 Technology,  
Fault feedback can be detected by monitoring the  
voltage at the input pin.  
BLOCK DIAGRAM  
DRAIN  
2
Overvoltage  
Clamp  
INPUT  
Gate  
Control  
1
Linear  
Current  
Limiter  
Over  
Temperature  
3
SOURCE  
FC01000  
February 2003  
1/21  

VND3NV04 替代型号

型号 品牌 替代类型 描述 数据表
VND3NV0413TR STMICROELECTRONICS

完全替代

OMNIFET II fully autoprotected Power MOSFET
VND3NV04TR-E STMICROELECTRONICS

完全替代

OMNIFET II fully autoprotected Power MOSFET

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Double 4m Ohm high side driver with analog current sense for automotive applications