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VND5012AK-E PDF预览

VND5012AK-E

更新时间: 2024-10-28 02:56:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 驱动器
页数 文件大小 规格书
13页 115K
描述
DOUBLE CHANNEL HIGH SIDE DRIVER WITH ANALOG CURRENT SENSE FOR AUTOMOTIVE APPLICATIONS

VND5012AK-E 技术参数

生命周期:Active零件包装代码:SOIC
包装说明:HSSOP, SOP24,.4,32针数:24
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.39.00.01Factory Lead Time:18 weeks
风险等级:1.41Samacsys Description:VND5012AK-E, Dual MOSFET Power Driver 40A, Non-Inverting, 4.5 → 36 V, 24-Pin PowerSSO EP
内置保护:TRANSIENT; OVER CURRENT; OVER VOLTAGE; THERMAL; UNDER VOLTAGE驱动器位数:2
接口集成电路类型:BUFFER OR INVERTER BASED PERIPHERAL DRIVERJESD-30 代码:R-PDSO-G24
JESD-609代码:e3长度:10.3 mm
湿度敏感等级:3功能数量:2
端子数量:24输出电流流向:SOURCE
封装主体材料:PLASTIC/EPOXY封装代码:HSSOP
封装等效代码:SOP24,.4,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, HEAT SINK/SLUG, SHRINK PITCH峰值回流温度(摄氏度):NOT SPECIFIED
电源:8/36 V认证状态:Not Qualified
座面最大高度:2.47 mm子类别:Peripheral Drivers
最大供电电压:36 V最小供电电压:4.5 V
标称供电电压:13 V表面贴装:YES
技术:CMOS端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:7.5 mm

VND5012AK-E 数据手册

 浏览型号VND5012AK-E的Datasheet PDF文件第2页浏览型号VND5012AK-E的Datasheet PDF文件第3页浏览型号VND5012AK-E的Datasheet PDF文件第4页浏览型号VND5012AK-E的Datasheet PDF文件第5页浏览型号VND5012AK-E的Datasheet PDF文件第6页浏览型号VND5012AK-E的Datasheet PDF文件第7页 
VND5012AK-E  
DOUBLE CHANNEL HIGH SIDE DRIVER WITH ANALOG  
CURRENT SENSE FOR AUTOMOTIVE APPLICATIONS  
ADVANCE DATA  
Table 1. General Features  
Figure 1. Package  
V
R
I
D
TYPE  
CC  
DS(on)  
VND5012AK-E  
41V  
12m(*)  
40A  
(*) Per channel  
OUTPUT CURRENT: 40A  
3.0V CMOS COMPATIBLE INPUT  
CURRENT SENSE DISABLE  
PROPORTIONAL LOAD CURRENT SENSE  
UNDERVOLTAGE SHUT-DOWN  
OVERVOLTAGE CLAMP  
THERMAL SHUT DOWN  
PowerSSO-24  
CURRENT AND POWER LIMITATION  
VERY LOW STAND-BY CURRENT  
PROTECTION AGAINST LOSS OF GROUND  
AND LOSS OF V  
CC  
VERY LOW ELECTROMAGNETIC  
SUSCEPTIBILITY  
OPTIMIZED ELECTROMAGNETIC EMISSION  
REVERSE BATTERY PROTECTION (**)  
This device integrates an analog current sense  
which delivers a current proportional to the load  
current (according to a known ratio) when CS_DIS  
is driven low or left open.  
IN COMPLIANCE WITH THE 2002/95/EC  
EUROPEAN DIRECTIVE  
When CS_DIS is driven high, the CURRENT  
SENSE pin is in a high impedance condition.  
Output current limitation protects the device in  
overload condition. In case of long overload  
duration, the device limits the dissipated power to  
safe level up to thermal shut-down intervention.  
Thermal shut-down with automatic restart allows  
the device to recover normal operation as soon as  
fault condition disappears.  
DESCRIPTION  
The VND5012AK-E is a monolithic device made  
using STMicroelectronics VIPower technology. It  
is intended for driving resistive or inductive loads  
with one side connected to ground. Active V pin  
voltage clamp protects the device against low  
CC  
energy  
spikes  
(see  
ISO7637  
transient  
compatibility table).  
Table 2. Order Codes  
Package  
Tube  
VND5012AK-E  
Tape and Reel  
PowerSSO-24  
VND5012AKTR-E  
Note: (**) See application schematic at page 8  
Rev. 3  
January 2005  
1/13  
This is preliminary information on a new product now in development. Details are subject to change without notice.  

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