生命周期: | Obsolete | 零件包装代码: | MSOP |
包装说明: | SMALL OUTLINE, S-PDSO-G8 | 针数: | 8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.3 | 其他特性: | LOW THRESHOLD |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (ID): | 2.3 A | 最大漏源导通电阻: | 0.135 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MO-187AA |
JESD-30 代码: | S-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | SQUARE | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL AND P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UZXMD63N02X | DIODES |
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Small Signal Field-Effect Transistor, 1.8A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
UZXMD63N02XTA | ZETEX |
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Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
UZXMD63N02XTC | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
UZXMD63N03X | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 1.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
UZXMD63N03XTA | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
UZXMD63N03XTC | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 2.3A I(D), 30V, 2-Element, N-Channel, Silicon, Metal | |
UZXMD63P02X | ZETEX |
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Small Signal Field-Effect Transistor, 1.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal | |
UZXMD63P03X | ZETEX |
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Small Signal Field-Effect Transistor, 1.2A I(D), 30V, 2-Element, P-Channel, Silicon, Metal | |
UZXMHC3A01T8TA | ZETEX |
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Power Field-Effect Transistor, 2.7A I(D), 30V, 0.12ohm, 4-Element, N-Channel and P-Channel | |
UZXMHC3A01T8TC | DIODES |
获取价格 |
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.12ohm, 4-Element, N-Channel and P-Channel |