是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT-89 | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.45 |
其他特性: | LOW THRESHOLD | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 1 A | 最大漏源导通电阻: | 0.7 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-F3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 10 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
UZXMN10A08E6TA | DIODES | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta |
获取价格 |
|
UZXMN10A08E6TC | DIODES | Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta |
获取价格 |
|
UZXMN10A09KTC | DIODES | Power Field-Effect Transistor, 5A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Met |
获取价格 |
|
UZXMN10B08E6TA | DIODES | 暂无描述 |
获取价格 |
|
UZXMN10B08E6TC | DIODES | Power Field-Effect Transistor, 1.6A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Me |
获取价格 |
|
UZXMN2A01E6TA | DIODES | Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal |
获取价格 |