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UZXMN2A02X8TA PDF预览

UZXMN2A02X8TA

更新时间: 2024-11-09 15:56:27
品牌 Logo 应用领域
捷特科 - ZETEX /
页数 文件大小 规格书
7页 244K
描述
Small Signal Field-Effect Transistor, 7.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MSOP-8

UZXMN2A02X8TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:MSOP-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.17
其他特性:LOW THRESHOLD配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):7.6 A
最大漏源导通电阻:0.02 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

UZXMN2A02X8TA 数据手册

 浏览型号UZXMN2A02X8TA的Datasheet PDF文件第2页浏览型号UZXMN2A02X8TA的Datasheet PDF文件第3页浏览型号UZXMN2A02X8TA的Datasheet PDF文件第4页浏览型号UZXMN2A02X8TA的Datasheet PDF文件第5页浏览型号UZXMN2A02X8TA的Datasheet PDF文件第6页浏览型号UZXMN2A02X8TA的Datasheet PDF文件第7页 
ZXMN2A02X8  
20V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS  
V
= 20V; R  
= 0.02  
I = 7.8A  
D
DS(ON)  
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure  
that com bines the benefits of low on-resistance with fast switching speed. This  
m a ke s the m ide a l for high e fficie ncy, low volta ge , powe r m a na ge m e nt  
applications.  
MSOP8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
Low profile SOIC package  
APPLICATIONS  
DC - DC Converters  
Power Managem ent Functions  
Disconnect switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMN2A02X8TA  
ZXMN2A02X8TC  
7”  
12m m  
12m m  
1000 units  
4000 units  
13”  
DEVICE MARKING  
Top View  
ZXMN  
2A02  
ISSUE 2 - J ANUARY 2005  
1

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