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UZXMN3A01E6TA PDF预览

UZXMN3A01E6TA

更新时间: 2024-02-27 15:45:58
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
7页 221K
描述
Small Signal Field-Effect Transistor, 2.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN

UZXMN3A01E6TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-23, 6 PINReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.11
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):2.4 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G6
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:6
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UZXMN3A01E6TA 数据手册

 浏览型号UZXMN3A01E6TA的Datasheet PDF文件第2页浏览型号UZXMN3A01E6TA的Datasheet PDF文件第3页浏览型号UZXMN3A01E6TA的Datasheet PDF文件第4页浏览型号UZXMN3A01E6TA的Datasheet PDF文件第5页浏览型号UZXMN3A01E6TA的Datasheet PDF文件第6页浏览型号UZXMN3A01E6TA的Datasheet PDF文件第7页 
ZXMN3A01E6  
30V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS  
V
= 30V; R  
= 0.12 I = 3.0A  
DS(ON) D  
DESCRIPTION  
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure  
that combines the benefits of low on-resistance with fast switching speed. This  
makes them ideal for high efficiency, low voltage, power management  
applications.  
SOT23-6  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23-6 package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
ZXMN3A01E6TA  
ZXMN3A01E6TC  
7”  
8mm  
8mm  
3000 units  
13”  
10000 units  
DEVICE MARKING  
Top View  
3A1  
ISSUE 2 - JULY 2002  
1

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