生命周期: | Obsolete | 零件包装代码: | SOT-23 |
包装说明: | SMALL OUTLINE, R-PDSO-G6 | 针数: | 6 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.32 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 1.5 A |
最大漏源导通电阻: | 0.25 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 6 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | MATTE TIN | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UZXMN10A09KTC | DIODES |
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Power Field-Effect Transistor, 5A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Met | |
UZXMN10B08E6TA | DIODES |
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暂无描述 | |
UZXMN10B08E6TC | DIODES |
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Power Field-Effect Transistor, 1.6A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Me | |
UZXMN2A01E6TA | DIODES |
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Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
UZXMN2A01F | ZETEX |
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Small Signal Field-Effect Transistor, 2A I(D), 20V, N-Channel, Silicon, Metal-oxide Semico | |
UZXMN2A02X8TA | ZETEX |
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Small Signal Field-Effect Transistor, 7.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
UZXMN2A02X8TC | ZETEX |
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Small Signal Field-Effect Transistor, 7.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
UZXMN2A03E6TA | ZETEX |
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Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
UZXMN2A03E6TC | ZETEX |
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Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
UZXMN2A14FTA | ZETEX |
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Small Signal Field-Effect Transistor, 3.4A I(D), 20V, 1-Element, N-Channel, Silicon, Metal |