5秒后页面跳转
UZXMHC3A01T8TC PDF预览

UZXMHC3A01T8TC

更新时间: 2024-11-09 13:22:11
品牌 Logo 应用领域
美台 - DIODES 开关脉冲光电二极管晶体管
页数 文件大小 规格书
10页 281K
描述
Power Field-Effect Transistor, 2.7A I(D), 30V, 0.12ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SM-8, 8 PIN

UZXMHC3A01T8TC 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.32Is Samacsys:N
配置:BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (ID):2.7 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:4端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL AND P-CHANNEL最大脉冲漏极电流 (IDM):14.5 A
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UZXMHC3A01T8TC 数据手册

 浏览型号UZXMHC3A01T8TC的Datasheet PDF文件第2页浏览型号UZXMHC3A01T8TC的Datasheet PDF文件第3页浏览型号UZXMHC3A01T8TC的Datasheet PDF文件第4页浏览型号UZXMHC3A01T8TC的Datasheet PDF文件第5页浏览型号UZXMHC3A01T8TC的Datasheet PDF文件第6页浏览型号UZXMHC3A01T8TC的Datasheet PDF文件第7页 
ZXMHC3A01T8  
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE  
SUMMARY  
N-Channel = V  
P-Channel = V  
= 30V : R  
= -30V : R  
= 0.12 ; I = 3.1A  
D
(BR)DSS  
(BR)DSS  
DS(on)  
DS(on)  
= 0.21 ; I = -2.3A  
D
DESCRIPTION  
This new generation of trench MOSFETs from Zetex  
utilizes a unique structure that com bines the benefits of  
low on-resistance with fast switching speed. This  
m akes them ideal for high efficiency, low voltage,  
power m anagem ent applications.  
SM8  
FEATURES  
S
S
4
Low on-resistance  
Fast switching speed  
Low threshold  
1
G
G
1
4
3
Low gate drive  
D , D  
D , D  
3 4  
1
2
Single SM-8 surface m ount package  
G
G
2
APPLICATIONS  
Single phase DC fan m otor drive  
S
S
3
2
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY  
PER REEL  
PINOUT  
ZXMHC3A01T8TA  
ZXMHC3A01T8TC  
7”  
12m m  
12m m  
1,000 units  
4,000 units  
13”  
DEVICE MARKING  
ZXMH  
C3A01  
Top View  
DRAFT ISSUE E - APRIL 2004  
S E M IC O N D U C T O R S  
1

与UZXMHC3A01T8TC相关器件

型号 品牌 获取价格 描述 数据表
UZXMHC6A07T8TA ZETEX

获取价格

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.3ohm, 4-Element, N-Channel and P-Channel,
UZXMHC6A07T8TC ZETEX

获取价格

Power Field-Effect Transistor, 1.8A I(D), 60V, 0.3ohm, 4-Element, N-Channel and P-Channel,
UZXMHN6A07T8TA ZETEX

获取价格

Small Signal Field-Effect Transistor, 1.4A I(D), 60V, 4-Element, N-Channel, Silicon, Metal
UZXMHN6A07T8TC ZETEX

获取价格

Small Signal Field-Effect Transistor, 1.4A I(D), 60V, 4-Element, N-Channel, Silicon, Metal
UZXMN10A07ZTA ZETEX

获取价格

Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-
UZXMN10A08E6TA DIODES

获取价格

Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
UZXMN10A08E6TC DIODES

获取价格

Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta
UZXMN10A09KTC DIODES

获取价格

Power Field-Effect Transistor, 5A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Met
UZXMN10B08E6TA DIODES

获取价格

暂无描述
UZXMN10B08E6TC DIODES

获取价格

Power Field-Effect Transistor, 1.6A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Me