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UZXMHN6A07T8TC PDF预览

UZXMHN6A07T8TC

更新时间: 2024-11-09 19:33:47
品牌 Logo 应用领域
捷特科 - ZETEX 开关光电二极管晶体管
页数 文件大小 规格书
7页 178K
描述
Small Signal Field-Effect Transistor, 1.4A I(D), 60V, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SM8, 8 PIN

UZXMHN6A07T8TC 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SMALL OUTLINE, R-PDSO-G8Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.17
配置:BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):1.4 A最大漏源导通电阻:0.3 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:4端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UZXMHN6A07T8TC 数据手册

 浏览型号UZXMHN6A07T8TC的Datasheet PDF文件第2页浏览型号UZXMHN6A07T8TC的Datasheet PDF文件第3页浏览型号UZXMHN6A07T8TC的Datasheet PDF文件第4页浏览型号UZXMHN6A07T8TC的Datasheet PDF文件第5页浏览型号UZXMHN6A07T8TC的Datasheet PDF文件第6页浏览型号UZXMHN6A07T8TC的Datasheet PDF文件第7页 
ZXMHN6A07T8  
60V N-CHANNEL MOSFET H-BRIDGE  
SUMMARY  
V
= 60V : R  
= 0.3 ; I = 1.6A  
(BR)DSS  
DS(on) D  
DESCRIPTION  
This new generation of trench MOSFETs from Zetex  
utilizes a unique structure that combines the benefits of  
low on-resistance w ith fast sw itching speed. This  
makes them ideal for high efficiency, low voltage,  
power management applications.  
SM8  
FEATURES  
S Compact package  
S Low on state losses  
S Low drive requirements  
S Operates up to 60V  
S 1 Amp continuous rating  
APPLICATIONS  
S Motor control  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZXMHN6 A0 7 T8 TA  
ZXMHN6 A0 7 T8 TC  
12mm  
12mm  
1,000 units  
4,000 units  
7”  
PINOUT  
13”  
DEVICE MARKING  
S ZXMH  
N6A07  
TOP VIEW  
ISSUE 2 - MAY 2004  
S E M IC O N D U C T O R S  
1

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