是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.17 |
配置: | BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 1.4 A | 最大漏源导通电阻: | 0.3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 4 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UZXMN10A07ZTA | ZETEX |
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Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal- | |
UZXMN10A08E6TA | DIODES |
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Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta | |
UZXMN10A08E6TC | DIODES |
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Small Signal Field-Effect Transistor, 1.5A I(D), 100V, 1-Element, N-Channel, Silicon, Meta | |
UZXMN10A09KTC | DIODES |
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Power Field-Effect Transistor, 5A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Met | |
UZXMN10B08E6TA | DIODES |
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暂无描述 | |
UZXMN10B08E6TC | DIODES |
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Power Field-Effect Transistor, 1.6A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Me | |
UZXMN2A01E6TA | DIODES |
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Small Signal Field-Effect Transistor, 2.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
UZXMN2A01F | ZETEX |
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Small Signal Field-Effect Transistor, 2A I(D), 20V, N-Channel, Silicon, Metal-oxide Semico | |
UZXMN2A02X8TA | ZETEX |
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Small Signal Field-Effect Transistor, 7.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal | |
UZXMN2A02X8TC | ZETEX |
获取价格 |
Small Signal Field-Effect Transistor, 7.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal |