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UZXMD63N02XTA PDF预览

UZXMD63N02XTA

更新时间: 2024-11-09 20:47:35
品牌 Logo 应用领域
捷特科 - ZETEX 开关光电二极管晶体管
页数 文件大小 规格书
7页 155K
描述
Small Signal Field-Effect Transistor, 2.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-187AA, MSOP-8

UZXMD63N02XTA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:MSOP-8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.14
其他特性:LOW THRESHOLD配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (ID):2.4 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-187AAJESD-30 代码:S-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:SQUARE封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

UZXMD63N02XTA 数据手册

 浏览型号UZXMD63N02XTA的Datasheet PDF文件第2页浏览型号UZXMD63N02XTA的Datasheet PDF文件第3页浏览型号UZXMD63N02XTA的Datasheet PDF文件第4页浏览型号UZXMD63N02XTA的Datasheet PDF文件第5页浏览型号UZXMD63N02XTA的Datasheet PDF文件第6页浏览型号UZXMD63N02XTA的Datasheet PDF文件第7页 
ZXMD63N02X  
DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
(BR)DSS=20V; RDS(ON)=0.13Ω; ID=2.4A  
V
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
MSOP8  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23 package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
ZXMD63N02XTA  
ZXMD63N02XTC  
7
12mm embossed  
12mm embossed  
1000 units  
4000 units  
Top View  
13  
DEVICE MARKING  
ZXM63N02  
ISSUE 1 - JUNE 2004  
1

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