Datasheet > UPG2115TB-A

UPG2115TB-A

更新时间： 2024-11-11 15:56:15

品牌	Logo	应用领域
日电电子 - NEC		射频微波
页数	文件大小	规格书
8页	55K
描述
Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, SUPER MINIMOLD, 6 PIN

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中文翻译

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技术参数
数据手册

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UPG2115TB-A 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.66
构造：	COMPONENT	增益：	14 dB
最大输入功率 (CW)：		JESD-609代码：	e6
最大工作频率：	960 MHz	最小工作频率：	893 MHz
最高工作温度：	90 °C	最低工作温度：	-30 °C
射频/微波设备类型：	NARROW BAND LOW POWER	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

UPG2115TB-A 数据手册

PRELIMINARY DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2115TB

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION

The µPG2115TB is a GaAs MMIC for PA driver amplifiers developed for L-band mobile communication

applications.

This device realizes low voltage operation with low current and low distortion characteristics. Moreover, the

device has HPF-type input matching circuit built-in, external parts are only three.

The package employed is a 6-pin super minimold.

FEATURES

•

Low operation voltage: V^DD= 3.0 V

f: 893 to 960 MHz @ P^out= +8 dBm

Low distortion: P^adj1= −60 dBc TYP. @ V^DD= 3.0 V, P^out= +8 dBm

External output matching

•

Low operation current: I^DD= 12 mA TYP. @ V^DD= 3.0 V, P^out= +8 dBm

External output matching

6-pin super minimold package

APPLICATION

Digital cellular: PDC800MHz etc.

•

ORDERING INFORMATION

Part Number

Package

6-pin super minimold

Marking

G2C

Supplying Form

Embossed tape 8 mm wide.

µPG2115TB-E3

Pin 1 face the tape perforation side.

Qty 3kpcs / reel.

Remark To order evaluation samples, please contact your local NEC sales office.

(Part number for sample order: µPG2115TB)

Caution The IC must be handled with care to prevent static discharge because its circuit composed of

GaAs HJ-FET.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. P15079EJ1V0DS00 (1st edition)

Date Published October 2000 N CP(K)

Printed in Japan

2000

12 3 4 5 6 7 8

中文翻译

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