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UPG2128TB-E3 PDF预览

UPG2128TB-E3

更新时间: 2024-11-11 14:36:31
品牌 Logo 应用领域
日电电子 - NEC /
页数 文件大小 规格书
9页 54K
描述
Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, SUPER MINIMOLD, 6 PIN

UPG2128TB-E3 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG2128TB  
L-BAND PA DRIVER AMPLIFIER  
DESCRIPTION  
The µPG2128TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-  
band application. The device can operate with 3.0 V TYP., having the high gain and low distortion.  
FEATURES  
Operation frequency  
Supply voltage  
: fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.)  
: VDD1 = 2.7 to 3.3 V (3.0 V TYP.)  
: VDD2 = 2.7 to 4.2 V (3.5 V TYP.)  
Circuit current  
: IDD = 40 mA TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +12 dBm  
: GP = 28 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = 16 dBm  
: GCR = 40 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 0.5 to 2.5 V,  
Pin = 16 dBm  
High power gain  
Gain control range  
Low distortion  
: Padj1 = 60 dBc TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +12 dBm,  
f = ±50 kHz, 21 kHz Bandwidth.  
High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)  
APPLICATION  
Digital Cellular: PDC 1.5 GHz etc.  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
G2M  
Supplying Form  
Embossed tape 8 mm wide  
µPG2128TB-E3  
6-pin super minimold  
Pin 1, 2, 3 face the perforation side of the tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2128TB  
Caution Electro-static sensitive devices  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10062EJ01V0DS (1st edition)  
Date Published February 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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