Datasheet > UPG2137T5A

UPG2137T5A

更新时间： 2023-03-15 00:00:00

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
12页	88K
描述
Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, PLASTIC, TSON-16

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPG2137T5A 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2137T5A

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION

The µPG2137T5A is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-

band application.

This device is housed in a 16-pin TSON (Thin small out-line non-leaded) package. And this package is able to

high-density surface mounting.

FEATURES

•

Operation frequency

Supply voltage

Circuit current

Power gain

: f^opt1= 893 to 960 MHz (0.8 GHz Band side)

: f^opt2= 1 429 to 1 453 MHz (1.5 GHz Band side)

: V^{DD1, 3}= 2.55 to 2.85 V (2.7 V TYP.)

: V^{DD2, 4}= 3.0 to 4.3 V (3.2 V TYP.)

: I^DD1= 28 mA TYP. @ V^DD1= 2.7 V, V^DD2= 3.2 V, V^AGC= 2.5 V (0.8 GHz Band side)

: I^DD2= 33 mA TYP. @ V^DD3= 2.7 V, V^DD4= 3.2 V, V^AGC= 2.5 V (1.5 GHz Band side)

: G^P1= 27 dB TYP. @ V^DD1= 2.7 V, V^DD2= 3.2 V, V^AGC= 2.5 V (0.8 GHz Band side)

G^P2= −13 dB TYP. @ V^DD1= 2.7 V, V^DD2= 3.2 V, V^AGC= 0.5 V (0.8 GHz Band side)

G^P3= 30 dB TYP. @ V^DD3= 2.7 V, V^DD4= 3.2 V, V^AGC= 2.5 V (1.5 GHz Band side)

G^P4= −10 dB TYP. @ V^DD3= 2.7 V, V^DD4= 3.2 V, V^AGC= 0.5 V (1.5 GHz Band side)

: P^{adj1, 3}= −60 dBc TYP. @ V^{DD1, 3}= 2.7 V, V^{DD2, 4}= 3.2 V, V^AGC= 2.5 V, P^out= +11 dBm,

∆f = ±50 kHz, 21 kHz Bandwidth (0.8/1.5 GHz Band side)

•

Low distortion

High-density surface mounting : 16-pin TSON package (3.3 × 2.3 × 0.6 mm)

APPLICATION

Digital Cellular: PDC 0.8/1.5 GHz Dual Band etc.

•

ORDERING INFORMATION

Part Number

Package

Marking

2137

Supplying Form

• Embossed tape 12 mm wide

µPG2137T5A-E1 16-pin TSON

• Pin 8, 9 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2137T5A

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10340EJ01V0DS (1st edition)

Date Published March 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2003

12 3 4 5 6 7...12

中文翻译

下载PDF

与UPG2137T5A相关器件

型号	品牌	获取价格	描述	数据表
UPG2137T5A-A	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, P
UPG2137T5A-E1	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, P
UPG2137T5A-E1-A	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, P
UPG2150T5L	NEC	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L	CEL	获取价格	GaAs INTEGRATED CIRCUIT
UPG2150T5L_07	CEL	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L-E2	CEL	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L-E2	NEC	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L-E2-A	NEC	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L-E2-A	CEL	获取价格	GaAs INTEGRATED CIRCUIT

与UPG2137T5A相关文章

REF70数据手册解读：高精度电压参考源的全面剖析
2024-07-08

2
解析30211801数据手册：PCB端子排MKDSV 5/3-9.5
2024-07-08

1
UL248-14数据手册深度解读：微型保险丝的全面剖析
2024-07-08

2
BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

17

产品中心

服务支持

精选活动

关于我们

帮助中心

UPG2137T5A

UPG2137T5A 数据手册

与UPG2137T5A相关器件

与UPG2137T5A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPG2137T5A

UPG2137T5A 数据手册

与UPG2137T5A相关器件

与UPG2137T5A相关文章

您还可以找

您在本页遇到什么问题？