Datasheet > UPG2137T5A-A

UPG2137T5A-A

更新时间： 2024-11-11 19:39:39

品牌	Logo	应用领域
日电电子 - NEC		射频微波
页数	文件大小	规格书
12页	88K
描述
Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, PLASTIC, TSON-16

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中文翻译

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技术参数
数据手册

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UPG2137T5A-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	其他特性：	IT CAN ALSO OPERATE AT 1429 TO 1453 MHZ
构造：	COMPONENT	增益：	25 dB
最大输入功率 (CW)：		JESD-609代码：	e6
最大工作频率：	960 MHz	最小工作频率：	893 MHz
最高工作温度：	90 °C	最低工作温度：	-30 °C
射频/微波设备类型：	NARROW BAND LOW POWER	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

UPG2137T5A-A 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2137T5A

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION

The µPG2137T5A is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-

band application.

This device is housed in a 16-pin TSON (Thin small out-line non-leaded) package. And this package is able to

high-density surface mounting.

FEATURES

•

Operation frequency

Supply voltage

Circuit current

Power gain

: f^opt1= 893 to 960 MHz (0.8 GHz Band side)

: f^opt2= 1 429 to 1 453 MHz (1.5 GHz Band side)

: V^{DD1, 3}= 2.55 to 2.85 V (2.7 V TYP.)

: V^{DD2, 4}= 3.0 to 4.3 V (3.2 V TYP.)

: I^DD1= 28 mA TYP. @ V^DD1= 2.7 V, V^DD2= 3.2 V, V^AGC= 2.5 V (0.8 GHz Band side)

: I^DD2= 33 mA TYP. @ V^DD3= 2.7 V, V^DD4= 3.2 V, V^AGC= 2.5 V (1.5 GHz Band side)

: G^P1= 27 dB TYP. @ V^DD1= 2.7 V, V^DD2= 3.2 V, V^AGC= 2.5 V (0.8 GHz Band side)

G^P2= −13 dB TYP. @ V^DD1= 2.7 V, V^DD2= 3.2 V, V^AGC= 0.5 V (0.8 GHz Band side)

G^P3= 30 dB TYP. @ V^DD3= 2.7 V, V^DD4= 3.2 V, V^AGC= 2.5 V (1.5 GHz Band side)

G^P4= −10 dB TYP. @ V^DD3= 2.7 V, V^DD4= 3.2 V, V^AGC= 0.5 V (1.5 GHz Band side)

: P^{adj1, 3}= −60 dBc TYP. @ V^{DD1, 3}= 2.7 V, V^{DD2, 4}= 3.2 V, V^AGC= 2.5 V, P^out= +11 dBm,

∆f = ±50 kHz, 21 kHz Bandwidth (0.8/1.5 GHz Band side)

•

Low distortion

High-density surface mounting : 16-pin TSON package (3.3 × 2.3 × 0.6 mm)

APPLICATION

Digital Cellular: PDC 0.8/1.5 GHz Dual Band etc.

•

ORDERING INFORMATION

Part Number

Package

Marking

2137

Supplying Form

• Embossed tape 12 mm wide

µPG2137T5A-E1 16-pin TSON

• Pin 8, 9 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2137T5A

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10340EJ01V0DS (1st edition)

Date Published March 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2003

12 3 4 5 6 7...12

中文翻译

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与UPG2137T5A-A相关器件

型号	品牌	获取价格	描述	数据表
UPG2137T5A-E1	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, P
UPG2137T5A-E1-A	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, P
UPG2150T5L	NEC	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L	CEL	获取价格	GaAs INTEGRATED CIRCUIT
UPG2150T5L_07	CEL	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L-E2	CEL	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L-E2	NEC	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L-E2-A	NEC	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L-E2-A	CEL	获取价格	GaAs INTEGRATED CIRCUIT
UPG2151T5K	CEL	获取价格	NECs COMPACT 1/2WL, S-BAND SPDT SWITCH

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