Datasheet > UPG2134TB-E3

UPG2134TB-E3

更新时间： 2024-01-18 11:48:56

品牌	Logo	应用领域
日电电子 - NEC		放大器射频微波驱动
页数	文件大小	规格书
9页	58K
描述
L-BAND PA DRIVER AMPLIFIER

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中文翻译

获取价格

技术参数
数据手册

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UPG2134TB-E3 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.67
构造：	COMPONENT	增益：	26 dB
最大输入功率 (CW)：	-8 dBm	JESD-609代码：	e6
最大工作频率：	1453 MHz	最小工作频率：	1429 MHz
最高工作温度：	90 °C	最低工作温度：	-30 °C
射频/微波设备类型：	NARROW BAND LOW POWER	端子面层：	Tin/Bismuth (Sn/Bi)
Base Number Matches：	1

UPG2134TB-E3 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2134TB

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION

The µPG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-

band application.

This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin

super minimold package. And this package is able to high-density surface mounting.

FEATURES

•

Operation frequency

Supply voltage

: f^opt= 1 429 to 1 453 MHz (1 441 MHz TYP.)

: V^DD1= 2.7 to 3.3 V (3.0 V TYP.)

: V^DD2= 2.7 to 4.2 V (3.5 V TYP.)

•

Circuit current

Power gain

: I^DD= 28 mA TYP. @ V^DD1= 3.0 V, V^DD2= 3.5 V, V^AGC= 2.5 V, Pⁱⁿ= −15 dBm

: G^P= 28 dB TYP. @ V^DD1= 3.0 V, V^DD2= 3.5 V, V^AGC= 2.5 V, Pⁱⁿ= −15 dBm

: GCR = 42 dB TYP. @ V^DD1= 3.0 V, V^DD2= 3.5 V, V^AGC= 0.5 to 2.5 V,

Pⁱⁿ= −15 dBm

Gain control range

•

Low distortion

: P^adj1= −60 dBc TYP. @ V^DD1= 3.0 V, V^DD2= 3.5 V, V^AGC= 2.5 V, P^out= +10 dBm,

f = 1 441 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth

High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

APPLICATION

Digital Cellular: PDC 1.5 GHz etc.

•

ORDERING INFORMATION

Part Number

Package

Marking

G3B

Supplying Form

• Embossed tape 8 mm wide

µPG2134TB-E3

6-pin super minimold

• Pin 1, 2, 3 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2134TB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10194EJ01V0DS (1st edition)

Date Published October 2002 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...9

中文翻译

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与UPG2134TB-E3相关器件

型号	品牌	获取价格	描述	数据表
UPG2134TB-E3-A	NEC	获取价格	Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, SUPER MINI MOLD, 6 PIN
UPG2135TK	NEC	获取价格	Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, LEADLESS MINIMOLD PACKAGE-6
UPG2135TK-E2	NEC	获取价格	Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, LEADLESS MINIMOLD PACKAGE-6
UPG2137T5A	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, P
UPG2137T5A-A	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, P
UPG2137T5A-E1	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, P
UPG2137T5A-E1-A	NEC	获取价格	Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, 3.30 X 2.30 MM, 0.60 MM HEIGHT, P
UPG2150T5L	NEC	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g
UPG2150T5L	CEL	获取价格	GaAs INTEGRATED CIRCUIT
UPG2150T5L_07	CEL	获取价格	SP3T SWITCH FOR BluetoothTM AND 802.11b/g

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