Datasheet > UPG2135TK-E2

UPG2135TK-E2

更新时间： 2024-01-25 05:04:27

品牌	Logo	应用领域
日电电子 - NEC		射频微波
页数	文件大小	规格书
9页	54K
描述
Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, LEADLESS MINIMOLD PACKAGE-6

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技术参数
数据手册

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UPG2135TK-E2 技术参数

是否无铅：	含铅	是否Rohs认证：	不符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.92	构造：	COMPONENT
增益：	28 dB	最大输入功率 (CW)：	-8 dBm
JESD-609代码：	e0	最大工作频率：	1453 MHz
最小工作频率：	1429 MHz	最高工作温度：	90 °C
最低工作温度：	-30 °C	射频/微波设备类型：	NARROW BAND LOW POWER
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

UPG2135TK-E2 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2135TK

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION

The µPG2135TK is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-

band application.

This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin

lead-less minimold package. And this package is able to high-density surface mounting.

FEATURES

•

Operation frequency

Supply voltage

: f^opt= 1 429 to 1 453 MHz (1 441 MHz TYP.)

: V^DD1= 2.7 to 3.3 V (3.0 V TYP.)

: V^DD2= 3.0 to 4.2 V (3.5 V TYP.)

•

Circuit current

Power gain

: I^DD= 35 mA TYP. @ V^DD1= 3.0 V, V^DD2= 3.5 V, V^AGC= 2.5 V, Pⁱⁿ= −16 dBm

: G^P= 30 dB TYP. @ V^DD1= 3.0 V, V^DD2= 3.5 V, V^AGC= 2.5 V, Pⁱⁿ= −16 dBm

: GCR = 42 dB TYP. @ V^DD1= 3.0 V, V^DD2= 3.5 V, V^AGC= 0.5 to 2.5 V,

Pⁱⁿ= −16 dBm

Gain control range

•

Low distortion

: P^adj1= −60 dBc TYP. @ V^DD1= 3.0 V, V^DD2= 3.5 V, V^AGC= 2.5 V, P^out= +12 dBm,

∆f = ±50 kHz, 21 kHz Bandwidth

High-density surface mounting : 6-pin lead-less minimold package (1.5 × 1.1 × 0.55 mm)

APPLICATION

Digital Cellular: PDC 1.5 GHz etc.

•

ORDERING INFORMATION

Part Number

Package

6-pin lead-less minimold (1511)

Marking

G3C

Supplying Form

• Embossed tape 8 mm wide

µPG2135TK-E2

• Pin 1, 6 face the perforation side of the tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2135TK

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10331EJ01V0DS (1st edition)

Date Published March 2003 CP(K)

Printed in Japan

NEC Compound Semiconductor Devices 2003

12 3 4 5 6 7...9

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