DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2131T5D
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2131T5D is GaAs MMIC for PA driver amplifier which were developed for dual band mobile phone and
another L-band application. This device realizes high gain and high output power.
This device is housed in a 14-pin LGA (CSP Type) package. And this package is able to high-density surface
mounting.
FEATURES
•
•
•
•
Operation freqecncy : fopt1 = 893 to 960 MHz (0.8 GHz Band side)
: fopt2 = 1 429 to 1 453 MHz (1.5 GHz Band side)
Supply voltage
Circuit current
Output power
: VDD1, 3 = 2.7 to 2.9 V (2.8 V TYP.)
: VDD2, 4 = 3.2 to 4.23 V (3.5 V TYP.)
: IDD1 = 30 mA TYP. @ VDD1 = 2.8 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +11 dBm, (0.8 GHz Band side)
: IDD2 = 30 mA TYP. @ VDD3 = 2.8 V, VDD4 = 3.5 V, VAGC = 2.5 V, Pout = +11 dBm, (1.5 GHz Band side)
: Pout1 = +14 dBm TYP. @ VDD1 = 2.8 V, VDD2 = 3.5 V, VAGC = 2.5 V (0.8 GHz Band side)
: Pout2 = −15 dBm MAX. @ VDD1 = 2.8 V, VDD2 = 3.5 V, VAGC = 0.5 V (0.8 GHz Band side)
: Pout3 = +14 dBm TYP. @ VDD3 = 2.8 V, VDD4 = 3.5 V, VAGC = 2.5 V (1.5 GHz Band side)
: Pout4 = −15 dBm MAX. @ VDD3 = 2.8 V, VDD4 = 3.5 V, VAGC = 0.5 V (1.5 GHz Band side)
: Padj1 = −63 dBc TYP. @ VDD1 = 2.8 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +11 dBm,
f = 925 MHz, ∆f = 50 kHz, 21 kHz Bandwidth (0.8 GHz Band side)
•
•
Low distortion
: Padj3 = −63 dBc TYP. @ VDD3 = 2.8 V, VDD4 = 3.5 V, VAGC = 2.5 V, Pout = +11 dBm,
f = 1 441 MHz, ∆f = 50 kHz, 21 kHz Bandwidth (1.5 GHz Band side)
High-density surface mounting : 14-pin LGA (CSP Type) package (2.5 × 2.5 × 0.6 mm)
APPLICATION
•
Digital cellular: PDC 0.8/1.5 GHz Dual Band etc.
ORDERING INFORMATION
Part Number
Package
Marking
G4B
Supplying Form
µPG2131T5D-E1
14-pin LGA (CSP Type)
• Embossed tape 8 mm wide
• Pin 6, 7 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2131T5D
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10272EJ02V0DS (2nd edition)
Date Published October 2003 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices 2003