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UPG2134TB PDF预览

UPG2134TB

更新时间: 2024-11-11 08:22:59
品牌 Logo 应用领域
日电电子 - NEC 放大器驱动
页数 文件大小 规格书
9页 58K
描述
L-BAND PA DRIVER AMPLIFIER

UPG2134TB 数据手册

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DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG2134TB  
L-BAND PA DRIVER AMPLIFIER  
DESCRIPTION  
The µPG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-  
band application.  
This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin  
super minimold package. And this package is able to high-density surface mounting.  
FEATURES  
Operation frequency  
Supply voltage  
: fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.)  
: VDD1 = 2.7 to 3.3 V (3.0 V TYP.)  
: VDD2 = 2.7 to 4.2 V (3.5 V TYP.)  
Circuit current  
Power gain  
: IDD = 28 mA TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = 15 dBm  
: GP = 28 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = 15 dBm  
: GCR = 42 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 0.5 to 2.5 V,  
Pin = 15 dBm  
Gain control range  
Low distortion  
: Padj1 = 60 dBc TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +10 dBm,  
f = 1 441 MHz, f = ±50 kHz, 21 kHz Bandwidth  
High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)  
APPLICATION  
Digital Cellular: PDC 1.5 GHz etc.  
ORDERING INFORMATION  
Part Number  
Package  
Marking  
G3B  
Supplying Form  
Embossed tape 8 mm wide  
µPG2134TB-E3  
6-pin super minimold  
Pin 1, 2, 3 face the perforation side of the tape  
Qty 3 kpcs/reel  
Remark To order evaluation samples, contact your nearby sales office.  
Part number for sample order: µPG2134TB  
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PG10194EJ01V0DS (1st edition)  
Date Published October 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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