DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2134TB
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2134TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-
band application.
This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin
super minimold package. And this package is able to high-density surface mounting.
FEATURES
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Operation frequency
Supply voltage
: fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.)
: VDD1 = 2.7 to 3.3 V (3.0 V TYP.)
: VDD2 = 2.7 to 4.2 V (3.5 V TYP.)
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Circuit current
Power gain
: IDD = 28 mA TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −15 dBm
: GP = 28 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pin = −15 dBm
: GCR = 42 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 0.5 to 2.5 V,
Pin = −15 dBm
Gain control range
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Low distortion
: Padj1 = −60 dBc TYP. @ VDD1 = 3.0 V, VDD2 = 3.5 V, VAGC = 2.5 V, Pout = +10 dBm,
f = 1 441 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth
High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
Digital Cellular: PDC 1.5 GHz etc.
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ORDERING INFORMATION
Part Number
Package
Marking
G3B
Supplying Form
• Embossed tape 8 mm wide
µPG2134TB-E3
6-pin super minimold
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2134TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10194EJ01V0DS (1st edition)
Date Published October 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002