DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG2130TB
L-BAND PA DRIVER AMPLIFIER
DESCRIPTION
The µPG2130TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-
band application. The device can operate with 3.0 V TYP., having the high gain and low distortion.
FEATURES
•
•
Operation frequency
Supply voltage
: fopt = 1 429 to 1 453 MHz (1 441 MHz TYP.)
: VDD1 = 2.7 to 3.3 V (3.0 V TYP.)
: VDD2 = 3.0 to 4.2 V (3.5 V TYP.)
•
•
•
Circuit current
: IDD = 25 mA TYP. @ VDD1 = 3.0 V, VDD2 = 3.2 V, VAGC = 2.5 V, Pout = +10 dBm
: GP = 30 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.2 V, VAGC = 2.5 V, Pin = −20 dBm
: GCR = 42 dB TYP. @ VDD1 = 3.0 V, VDD2 = 3.2 V, VAGC = 0.5 to 2.5 V,
Pin = −20 dBm
High power gain
Gain control range
•
•
Low distortion
: Padj1 = −60 dBc TYP. @ VDD1 = 3.0 V, VDD2 = 3.2 V, VAGC = 2.5 V, Pout = +10 dBm,
∆f = ±50 kHz, 21 kHz Bandwidth.
High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)
APPLICATION
Digital Cellular: PDC 1.5 GHz etc.
•
ORDERING INFORMATION
Part Number
Package
Marking
G2P
Supplying Form
• Embossed tape 8 mm wide
µPG2130TB-E3
6-pin super minimold
• Pin 1, 2, 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: µPG2130TB
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PG10106EJ01V0DS (1st edition)
Date Published March 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002