Datasheet > UPG2115TB-E3-A

UPG2115TB-E3-A

更新时间： 2024-01-18 15:39:19

品牌	Logo	应用领域
日电电子 - NEC		射频微波
页数	文件大小	规格书
9页	55K
描述
Narrow Band Low Power Amplifier, 893MHz Min, 960MHz Max, SUPER MINIMOLD, 6 PIN

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

UPG2115TB-E3-A 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	构造：	COMPONENT
增益：	14 dB	最大输入功率 (CW)：
JESD-609代码：	e6	最大工作频率：	960 MHz
最小工作频率：	893 MHz	最高工作温度：	90 °C
最低工作温度：	-30 °C	射频/微波设备类型：	NARROW BAND LOW POWER
端子面层：	Tin/Bismuth (Sn/Bi)

UPG2115TB-E3-A 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

µPG2115TB

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION

The µPG2115TB is GaAs MMIC for PA driver amplifier which were developed for mobile phone and another L-

band application.

This device can operate with 3.0 V TYP., having the high gain and low distortion. This device is housed in a 6-pin

super minimold package. And this package is able to high-density surface mounting.

FEATURES

•

Operation frequency

Supply voltage

Circuit current

Power gain

: f^opt= 893 to 960 MHz

: V^DD= 2.7 to 3.3 V (3.0 V TYP.)

: I^DD= 12 mA TYP. @ V^DD= 3.0 V, P^out= +8 dBm

: G^P= 17 dB TYP. @ V^DD= 3.0 V, P^out= +8 dBm

: P^adj1= −60 dBc TYP. @ V^DD= 3.0 V, P^out= +8 dBm,

f = 926 MHz, ∆f = ±50 kHz, 21 kHz Bandwidth

Low distortion

•

Input port matching circuit built-in : HPF-Type matching circuit

High-density surface mounting : 6-pin super minimold package (2.0 × 1.25 × 0.9 mm)

APPLICATION

Digital Cellular: PDC 800 MHz etc.

•

ORDERING INFORMATION

Part Number

Package

Marking

G2C

Supplying Form

• Embossed tape 8 mm wide

µPG2115TB-E3

6-pin super minimold

• Pin 1, 2, 3 face the perforation side of the tape

• Qty 3 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPG2115TB

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

The information in this document is subject to change without notice. Before using this document, please confirm that

this is the latest version.

Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices

representative for availability and additional information.

Document No. PG10169EJ01V0DS (1st edition)

The mark • shows major revised points.

(Previous No. P15079EJ1V0DS00)

Date Published July 2002 CP(K)

Printed in Japan

NEC Corporation 2000

NEC Compound Semiconductor Devices 2002

12 3 4 5 6 7...9

中文翻译

下载PDF

与UPG2115TB-E3-A相关器件

型号	品牌	获取价格	描述	数据表
UPG2118K	ETC	获取价格	NECs 1.5W GaAs MMIC POWER AMPLIFIER
UPG2118K-E3	ETC	获取价格	NECs 1.5W GaAs MMIC POWER AMPLIFIER
UPG2118K-E3-A	RENESAS	获取价格	IC,MICROWAVE/MILLIMETER WAVE AMPLIFIER,SINGLE,GAAS,LLCC,20PIN,PLASTIC
UPG2121TB	NEC	获取价格	L-BAND UP/DOWN CONVERTER
UPG2121TB-E3	NEC	获取价格	L-BAND UP/DOWN CONVERTER
UPG2124TH	NEC	获取价格	Narrow Band Medium Power Amplifier, 1920MHz Min, 1980MHz Max, PLASTIC, TSSOP-10
UPG2124TH-E1	NEC	获取价格	Narrow Band Medium Power Amplifier, 1920MHz Min, 1980MHz Max, PLASTIC, TSSOP-10
UPG2126TB	ETC	获取价格	IC
UPG2128TB	NEC	获取价格	Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, SUPER MINIMOLD, 6 PIN
UPG2128TB-A	NEC	获取价格	Narrow Band Low Power Amplifier, 1429MHz Min, 1453MHz Max, SUPER MINIMOLD, 6 PIN

与UPG2115TB-E3-A相关文章

BSS138LT3G：一款高效能N沟道MOSFET的全面解析
2024-07-04

5
解读EGP10B二极管资料手册：产品特性、参数分析
2024-07-04

5
RT9164AGG手册资料详解：引脚信息、设计指南
2024-07-04

6
2SA1037KPT资料详解：产品特性、电气参数、设计指南
2024-07-04

6

产品中心

服务支持

精选活动

关于我们

帮助中心

UPG2115TB-E3-A

UPG2115TB-E3-A 技术参数

UPG2115TB-E3-A 数据手册

与UPG2115TB-E3-A相关器件

与UPG2115TB-E3-A相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

UPG2115TB-E3-A

UPG2115TB-E3-A 技术参数

UPG2115TB-E3-A 数据手册

与UPG2115TB-E3-A相关器件

与UPG2115TB-E3-A相关文章

您还可以找

您在本页遇到什么问题？