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UPDS3100E3 PDF预览

UPDS3100E3

更新时间: 2024-11-20 19:51:15
品牌 Logo 应用领域
美高森美 - MICROSEMI 功效瞄准线光电二极管
页数 文件大小 规格书
4页 251K
描述
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon, GREEN, PLASTIC, POWERDI 5, 3 PIN

UPDS3100E3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:R-PDSO-F3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:FREE WHEELING DIODE, LOW POWER LOSS应用:EFFICIENCY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-F3JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:90 A
元件数量:1相数:1
端子数量:3最高工作温度:150 °C
最低工作温度:-65 °C最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
表面贴装:YES技术:SCHOTTKY
端子面层:MATTE TIN端子形式:FLAT
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

UPDS3100E3 数据手册

 浏览型号UPDS3100E3的Datasheet PDF文件第2页浏览型号UPDS3100E3的Datasheet PDF文件第3页浏览型号UPDS3100E3的Datasheet PDF文件第4页 
UPDS3100  
3 Amp High Voltage Schottky Barrier  
Rectifier PowerDI5  
S C O T T S D A L E D I V I S I O N  
DESCRIPTION  
APPEARANCE  
The UPDS3100 offers a small and powerful surface mount package for a  
high voltage 100 Volt, 3 Amp rated Schottky with low forward voltage and  
low leakage current. For critical applications requiring very fast switching,  
these higher voltage Schottkys with their “hot carrier” features provide  
extremely fast switching to replace conventional ultrafast rectifiers. The  
very low thermal resistance of the PowerDI5 package design also  
permits cooler operating junction temperatures for minimal reverse leakage  
currents and lower power loss.  
PowerDI™5  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Guard ring die construction for transient protection  
Low power loss, high efficiency  
Silicon Schottky (hot carrier) rectifier for minimal  
t and elimination of reverse-recovery oscillations  
rr  
to reduce need for EMI filtering  
Low forward voltage drop  
High reverse voltage rating of 100 V (70 V rms)  
Low reverse leakage current  
For use in high-frequency switching power  
supplies, inverters, free wheeling, polarity  
protection, and “O-Ring” applications  
High junction temperature capability  
High forward surge current capability  
Environmentally friendly molding compound (no Br, Sb)  
Low inductive parasitics for minimal Ldi/dt effects  
Low power loss and high efficiency  
Low profile package  
Lead-Free Finish & RoHS Compliant per EU Directive Rev  
13.2.2003 (glass and high temperature solder  
exemptions per Annex Notes 5 and 7 therein)  
Robust package configuration for pick-and-place  
handling  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Junction & Storage Temperature (TJ, TSTG): -65 to +150oC  
Case Material: Molded Plastic, Environmentally  
Friendly “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
Average Rectified Output Current (IO): 3 Amps for Single  
phase, half wave, 60 Hz, resistive or inductive load (also  
see Figure 5). For capacitive load, derate current by  
20%.  
Moisture sensitivity: Level 1 per J-STD-020C.  
Terminals: Finish – Matte Tin annealed over  
Copper lead frame (  
per JESD97)  
Peak Repetitive Reverse Voltage (VRRM): 100 V Working  
Peak Reverse Voltage (VRWM): 100 V  
DC Blocking Voltage (VR): 100 V  
Solderable per MIL-STD-202, Method 208  
Marking: See marking information on page 3  
Polarity: See Diagram  
RMS Reverse Voltage (VR(RMS)): 70 V  
Weight: 0.093 grams (approx.)  
Non-Repetitive Peak Forward Surge Current @ 8.3 ms  
Single half sine-wave Superimposed on Rated Load  
(IFSM): 90A  
Tape & Reel Option: 5000/reel (13”)  
Thermal Resistance Junction to bottom of case (RθJC) or  
Junction to Soldering Point (RθJS): 6.0oC/W  
Thermal Resistance (RθJA): 100oC/W (Note 1), 75oC/W  
(Note 2), 50oC/W (Note 3).  
Notes: 1. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)  
2. Polyimide PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)  
3. Polyimide PCB, 2 oz. Copper with larger Cathode pad dimensions  
9.4 mm x 7.2 mm and Anode pad dimensions 2.7 mm x 1.6 mm  
Copyright © 2005  
2-3-2005 REV 0  
Microsemi  
Page 1  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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