Datasheet > UPF2012P

UPF2012P

更新时间： 2024-11-18 21:20:31

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
6页	160K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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UPF2012P 技术参数

UPF2012

12W, 2.0 GHz, 26V Broadband RF Power N-Channel

Enhancement-Mode Lateral MOSFET

This device is designed for base station applications up to frequencies of 2.0 GHz. Rated with

a minimum output power of 12W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-

Carrier Power Amplifiers in Class A or AB operation.

• ALL GOLD metal system for highest reliability.

• Industry standard package.

• Low intermodulation distortion of –30dBc at 12W (PEP).

• Application Specific Performance, 1.84 GHz

Package Type 440095

GSM:

12 Watts

6 Watts

3 Watts

2 Watts

15 dB

PN: UPF2012F

EDGE:

IS95 CDMA:

W-CDMA:

Package Type 440109

PN: UPF2012P

Package Type 440178

PN: UPF2012-178

Page 1 of 6

Specifications subject to change without notice

http://cree.com/

UPF2012 Rev. 2

12 3 4 5 6

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