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UPG103B PDF预览

UPG103B

更新时间: 2024-11-17 22:17:15
品牌 Logo 应用领域
日电电子 - NEC 射频和微波射频放大器微波放大器
页数 文件大小 规格书
8页 49K
描述
WIDE-BAND AMPLIFIER

UPG103B 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.26其他特性:HIGH RELIABILITY
特性阻抗:50 Ω构造:COMPONENT
增益:10 dB最大输入功率 (CW):15 dBm
最大工作频率:3000 MHz最小工作频率:50 MHz
最高工作温度:80 °C最低工作温度:-50 °C
射频/微波设备类型:WIDE BAND LOW POWERBase Number Matches:1

UPG103B 数据手册

 浏览型号UPG103B的Datasheet PDF文件第2页浏览型号UPG103B的Datasheet PDF文件第3页浏览型号UPG103B的Datasheet PDF文件第4页浏览型号UPG103B的Datasheet PDF文件第5页浏览型号UPG103B的Datasheet PDF文件第6页浏览型号UPG103B的Datasheet PDF文件第7页 
DATA SHEET  
GaAs INTEGRATED CIRCUIT  
µPG103B  
WIDE-BAND AMPLIFIER  
µPG103B is GaAs integrated circuit designed as wide band (50 MHz to 3GHz) amplifiers.  
This device is most suitable for the microwave communication system and the measurement equipment.  
FEATURES  
Ultra wide band : f = 50 MHz to 3 GHz  
Input/output impedance matched to 50  
Hermetic sealed ceramic package assures high reliability  
ORDERING INFORMATION  
PART NUMBER  
PACKAGE  
µPG103B  
T-31, 8 PIN CERAMIC  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Drain Voltage  
VDD  
VGG  
Vin  
+8  
–8  
V
V
Gate Voltage  
Input Voltage  
–3 to +0.6  
+15  
V
Input Power  
Pin  
dBm  
W
Total Power Dissipation*  
Ptot  
1.5  
Operating Case Temperature Topt  
–65 to +125  
–65 to +175  
˚C  
˚C  
Storage Temperature  
Tstg  
* TC 125 ˚C  
RECOMMENDED OPERATING CONDITIONS (TA = 25 ˚C)  
Drain Voltage  
Gate Voltage  
VDD  
+5.0±0.5  
–5.0±0.5  
V
V
VGG  
Operating Case Temperature Topt  
–50 to +80  
˚C  
Document No. P11342EJ1V0DS00 (1st edition)  
Date Published March 1996 P  
Printed in Japan  
1996  
©

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