UPG101P

更新时间： 2024-11-18 12:16:59

品牌	Logo	应用领域
日电电子 - NEC		射频和微波射频放大器微波放大器
页数	文件大小	规格书
8页	107K
描述
WIDE BAND AMPLIFIER CHIPS

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中文翻译

获取价格

技术参数
数据手册

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UPG101P 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.72	Is Samacsys：	N
构造：	COMPONENT	增益：	14 dB
最大工作频率：	3000 MHz	最小工作频率：	50 MHz
射频/微波设备类型：	WIDE BAND LOW POWER	Base Number Matches：	1

UPG101P 数据手册

DATA SHEET

GaAs INTEGRATED CIRCUIT

PPG100P, PPG101P

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION

PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are

available in chip form.

PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same

frequency band. These devices are most suitable for the IF stage of microwave communication system and the

measurement equipment.

FEATURES

•

Wide band : f = 50 MHz to 3 GHz

ORDERING INFORMATION

PART NUMBER

PPG100P

FORM

chip

PPG101P

ABSOLUTE MAXIMUM RATINGS (T^A= 25 °C)

PPG100P

PPG101P

+10

Drain Voltage

V^DD

V^GG

Vⁱⁿ

Gate Voltage

ð8

Input Voltage

ð3 to +0.6

+15

ð5 to +0.6

+15

Input Power

Pⁱⁿ

dBm

Total Power Dissipation

Operating Temperature

Storage Temperature

P^tot^*1

T^opr^*2

T^stg

1.5

ð65 to +125

ð65 to +175

ð65 to +125

ð65 to +175

°C

*1 Mounted with AuSn hard solder

*2 The temperature of base material baside the chip

Document No. P12402EJ2V0DS00 (2nd edition)

(Previous No. IC-3144)

Date Published February 1997 N

Printed in Japan

1992

12 3 4 5 6 7 8

中文翻译

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