UPG100P

更新时间： 2024-11-18 03:23:15

品牌	Logo	应用领域
日电电子 - NEC		射频和微波射频放大器微波放大器
页数	文件大小	规格书
4页	57K
描述
LOW NOISE WIDE-BAND AMPLIFIER

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中文翻译

获取价格

技术参数
数据手册

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UPG100P 技术参数

生命周期：	Obsolete	包装说明：	CHIP
Reach Compliance Code：	unknown	风险等级：	5.71
Is Samacsys：	N	其他特性：	LOW NOISE, HIGH RELIABILITY
特性阻抗：	50 Ω	构造：	COMPONENT
增益：	14 dB	最大输入功率 (CW)：	15 dBm
最大工作频率：	3000 MHz	最小工作频率：	50 MHz
最高工作温度：	125 °C	最低工作温度：	-65 °C
射频/微波设备类型：	WIDE BAND LOW POWER	Base Number Matches：	1

UPG100P 数据手册

LOW NOISE

WIDE-BAND AMPLIFIER

UPG100B

UPG100P

FEATURES

POWER GAIN AND NOISE FIGURE

vs. FREQUENCY

• ULTRA WIDE BAND: 50 MHz to 3 GHz

• LOW NOISE: 2.7 dB TYP at f = 50 MHz to 3 GHz

• INPUT/OUTPUT IMPEDANCE MATCHED TO 50 Ω

• HERMETIC SEALED PACKAGE ASSURES HIGH

RELIABILITY

DD = +5 V,

GG = -5 V

= -25˚C

= +25˚C

= +75˚C

• WIDE OPERATING TEMPERATURE RANGE

DESCRIPTION

The UPG100 is a GaAs monolithic integrated circuit designed

as a low noise amplifier from 50 MHz to 3 GHz. This device

is suitable for low noise IF gain stages in microwave commu-

nication and measurement equipment.

10 20

50 100 200 500 1000

5000

Frequency, f (MHz)

ELECTRICAL CHARACTERISTICS (TA = 25°C, VDD = +5V, VGG = -5 V, f = 0.05 to 3 GHz, Zs = ZL = 50 Ω)

PART NUMBER

PACKAGE OUTLINE

UPG100B,UPG100P

B08, CHIP

SYMBOLS

IDD

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

Drain Bias Current (RF off)

IGG

Gate Bias Current (RF off)

Power Gain

0.7

1.5

∆GL

FlatnessGain

±1.5

NoiseFigure

2.7

3.5

P1dB

Output Power at 1 dB gain compression point

Input Return Loss

dBm

RLIN

RLOUT

ISOL

RTH (CH-C)

Output Return Loss

Isolation

Thermal Resistance (Channel to Case)

°C/W

California Eastern Laboratories

12 3 4

中文翻译

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