Datasheet > UPF1010F

UPF1010F

更新时间： 2024-11-18 20:51:39

品牌	Logo	应用领域
科锐 - CREE		/
页数	文件大小	规格书
11页	250K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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UPF1010F 技术参数

UPF1010

10W, 1.0 GHz, 26V Broadband RF Power N-Channel

Enhancement-Mode Lateral MOSFET

This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with

a minimum output power of 10W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-

Carrier Power Amplifiers in Class A or AB operation.

• ALL GOLD metal system for highest reliability.

• Industry standard package.

• Low intermodulation distortion of –30dBc at 10W (PEP).

Package Type 440095

PN: UPF1010F

Package Type 440109

PN: UPF1010P

Package Type 440178

PN: UPF1010-178

Page 1 of 11

Specifications subject to change without notice

http://cree.com/

UPF1010 Rev. 2

12 3 4 5 6 7...11

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