UPDS835L
8 Amp Low Schottky Barrier Rectifier
PowerDI™ 5
S C O T T S D A L E D I V I S I O N
DESCRIPTION
APPEARANCE
The UPDS835L offers a small and powerful surface mount package for a
35 Volt 8 Amp rated Schottky with low forward voltage and very low
leakage current. For critical applications requiring very fast switching,
these Schottky higher reverse voltage ratings with their “hot carrier”
features provide extremely fast switching to replace conventional ultrafast
rectifiers. The very low thermal resistance of the PowerDI™5 package
design permits cooler operating junction temperatures for minimal reverse
leakage currents and lower power loss.
PowerDI™5
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
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Guard ring die construction for transient protection
Low power loss, high efficiency
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Silicon Schottky (hot carrier) rectifier for minimal
t and elimination of reverse-recovery
rr
oscillations to reduce need for EMI filtering
Low forward voltage drop
For use in high-frequency switching power
supplies, inverters, free wheeling, polarity
protection, and “ORing” applications
Low reverse leakage current
High junction temperature capability
High forward surge current capability
Environmentally friendly molding compound (no Br, Sb)
Low inductive parasitics for minimal Ldi/dt effects
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Low power loss and high efficiency
Robust package configuration for pick-and-place
handling
Lead-Free Finish & RoHS Compliant per EU Directive Rev
13.2.2003 (glass and high temperature solder exemptions
per Annex Notes 5 and 7 therein)
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Full-metallic bottom eliminates flux entrapment
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
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Junction Temperature (TJ): -65 to +125oC
Storage Temperature (TSTG): -65 to +150oC
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Case Material: Molded Plastic, Environmentally
Friendly “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Average Rectified Output Current (IO): 8 Amps for Single
phase, half wave, 60Hz, resistive or inductive load (also
see Figure 5). For capacitive load, derate current by 20%.
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Moisture sensitivity: Level 1 per J-STD-020C
Terminals: Finish – Matte Tin annealed over
Copper lead frame (
per JESD97)
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Peak Repetitive Reverse Voltage (VRRM): 35 V Working
Peak Reverse Voltage (VRWM): 35 V
Solderable per MIL-STD-202, Method 208
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Marking: See marking information on page 3
DC Blocking Voltage (VR): 35 V
Polarity: See diagram in “Dimensions &
Schematic” on page 4
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RMS Reverse Voltage (VR(RMS): 25 V
Non-Repetitive Peak Forward Surge Current @ 8.3 ms
Single half sine-wave Superimposed on Rated Load
(IFSM): 120A
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Weight: 0.096 grams (approx.)
Tape & Reel Option: 5000/reel (13”)
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Thermal Resistance Junction to case bottom (RθJC) or
Soldering Point (RθJS): 3.0oC/W
Thermal Resistance (RθJA): 100oC/W (Note 1), 65oC/W
(Note 2), 45oC/W (Note 3) junction to ambient air (see last
page)
Notes: 1. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)
2. Polyimide PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)
3. Polyimide PCB, 2 oz. Copper with larger Cathode pad dimensions
9.4 mm x 7.2 mm and Anode pad dimensions 2.7 mm x 1.6 mm
Copyright © 2005
7-01-2005 REV A
Microsemi
Page 1
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503